SGER:Novel Disk Architecture for Extremely High Magnetic Storage Densities

SGER：用于极高磁存储密度的新型磁盘架构

• 批准号: 0205869
• 负责人: Jeffrey Streator
• 金额: $ 9.17万
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-03-01 至 2004-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0205869&HistoricalAwards=false
• 关键词: SGER; Novel; Disk; Architecture; Extremely

SGER: NOVEL DISK ARCHITECTURE FOR EXTREMELY HIGH MAGNETIC STORAGE DENSITIESJeffrey L. Streator, Georgia Institute of TechnologyYip-Wah Chung, Northwestern UniversityABSTRACTTo meet the demand for ever-increasing density of information storage, new recording technologies must be developed. For example, a stated goal of the National Storage Industry Consortium is to achieve a storage density of 1 terabyte per square inch (1 Tb/in2) by 2005. In this vein, researchers at Georgia Tech and Northwestern University propose a collaborative effort to investigate the viability of a new magnetic domain architecture for achieving ultrahigh recording densities. The novel architecture consists of a patterned perpendicular recording media with discrete, electrically insulated magnetic domains that are slightly recessed below the disk surface. The discrete nature of the domains prevents the thermal instabilities associated with continuous media and the superparamagnetic limit. Having the domains slightly recessed 1 to 2 nanometers--as opposed to protruding 10-12 nanometers as with conventional patterned media concepts--is expected to provide much better flying characteristics through reduction of spacing modulation. In addition, by having the domains electrically insulated, potential corrosion problems, which become increasingly likely with decreasing overcoat thickness, are virtually eliminated. Fabrication of the patterned media will be accomplished in two ways: (1) via nanosphere lithography and (2) via a focused ion beam (FIB) technique. The nanosphere lithography will employ an array of monodispersed nanospheres as a lithographic mask, while the FIB method will involve direct high-resolution mask-less etching. Characterization and evaluation in the proposed study will include topographical measurements, flyability studies and corrosion monitoring. In addition, the investigation will involve numerical simulation of slider flight as well as fabrication process modeling. Execution of this research plan will involve close collaboration between the two research groups. If successful, the study will provide a blueprint for developing a cost-effective and robust means of meeting the high-density storage demands of the information storage industry.

SGER：一种适用于极高磁致密度的新型磁盘结构。Streator，格鲁吉亚理工学院Yip-Wah Chung，西北大学摘要为了满足不断增长的信息存储密度的需求，必须开发新的记录技术。 例如，国家存储工业联盟的既定目标是到2005年实现每平方英寸1太字节（1 Tb/in 2）的存储密度。 在这种情况下，格鲁吉亚理工学院和西北大学的研究人员提出了一项合作努力，以调查一种新的磁畴结构的可行性，以实现磁记录密度。 这种新颖的结构由一种图案化的垂直记录介质组成，该介质具有离散的、电绝缘的磁畴，这些磁畴在磁盘表面下方略微凹陷。 畴的离散性质防止了与连续介质和超顺磁极限相关联的热不稳定性。 使域稍微凹进1至2纳米--与传统图案化介质概念的突出10-12纳米相反--预期通过减少间距调制提供好得多的飞行特性。 此外，通过使域电绝缘，实际上消除了随着外涂层厚度减小而变得越来越可能的潜在腐蚀问题。 图案化介质的制造将以两种方式完成：（1）经由纳米球光刻和（2）经由聚焦离子束（FIB）技术。 纳米球光刻将采用单分散纳米球阵列作为光刻掩模，而FIB方法将涉及直接高分辨率无掩模蚀刻。 拟议研究中的表征和评估将包括地形测量、飞行性研究和腐蚀监测。 此外，调查将涉及滑块飞行的数值模拟以及制造工艺建模。 这一研究计划的执行将涉及两个研究小组之间的密切合作。 如果成功，该研究将提供一个蓝图，以开发一个具有成本效益和强大的手段，以满足信息存储行业的高密度存储需求。