NER: Optical Modulation by Field Gated Transparency

NER:通过场选通透明度进行光学调制

基本信息

  • 批准号:
    0210574
  • 负责人:
  • 金额:
    $ 8.28万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2002
  • 资助国家:
    美国
  • 起止时间:
    2002-08-01 至 2003-07-31
  • 项目状态:
    已结题

项目摘要

This proposal was received in response to Nanoscale Science and Engineering initiative, NSF 01-157, category NER. This program will explore the feasibility of using field effect induced charge injection into semiconducting, single wall carbon nanotubes to modulate the intensity of the optical absorption in thin, optically uniform films of nanotubes. The approach combines and extends recent results showing that 1) nanotube absorption bands can be modulated by chemically and electrochemically induced shifts of the nanotube Fermi levels and 2) recent successes in nanotube based field effect transistors which rely on field gating to similarly shift the nanotube Fermi level. For bulk nanotube samples possessing typical diameters ranging from ~1.1 - 1.6 nm the absorption band of interest (the V1 to C1 transition for the semiconducting nanotubes) straddles the 1.55 mm wavelength having technological relevance in fiber optic communications. Use of the field effect for modulation will result in an all electrically addressable device, with high anticipated switching speeds. The research will involve development of electrically coupled nanotube films having good optical clarity, the integration of these films into transparent electrode, field-gated devices, and the exploration of chemical doping and nanotube-nanotube screening effects on the function of the devices. The proposal identifies a fundamentally new mechanism for effecting optical modulation and, if successful, should encourage further work both in optimizing the nanotube based implementation as well as the development of alternative materials and devices. In keeping with the University of Florida and the NSF mission of training future generations of scientists the program will fund the research of both graduate and undergraduate students. Historically under-represented groups in science will be particularly encouraged to participate.
这一建议是响应纳米科学和工程倡议,NSF 01-157,类别NER。该计划将探索使用场效应诱导电荷注入半导体,单壁碳纳米管调制薄,光学均匀的纳米管薄膜的光吸收强度的可行性。该方法结合并扩展了最近的结果,表明1)纳米管吸收带可以通过纳米管费米能级的化学和电化学诱导的移位来调制,以及2)最近在基于纳米管的场效应晶体管中的成功,其依赖于场选通来类似地移位纳米管费米能级。对于具有约1.1 - 1.6 nm的典型直径的块状纳米管样品,感兴趣的吸收带(半导体纳米管的V1到C1跃迁)跨越在光纤通信中具有技术相关性的1.55 mm波长。将场效应用于调制将导致具有高预期切换速度的全电可寻址装置。该研究将涉及开发具有良好光学透明度的电耦合纳米管薄膜,将这些薄膜集成到透明电极,场选通器件中,以及探索化学掺杂和纳米管-纳米管屏蔽效应对器件功能的影响。该提案确定了一种用于实现光学调制的全新机制,如果成功,应该鼓励进一步优化基于纳米管的实施以及开发替代材料和设备。为了与佛罗里达大学和国家科学基金会培养未来几代科学家的使命保持一致,该计划将资助研究生和本科生的研究。将特别鼓励历来在科学领域代表性不足的群体参加。

项目成果

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Andrew Rinzler其他文献

Andrew Rinzler的其他文献

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{{ truncateString('Andrew Rinzler', 18)}}的其他基金

Interface Physics and Device Technologies of Carbon-Nanostructure-Enabled Vertical Heterojunction Devices
碳纳米结构垂直异质结器件的界面物理和器件技术
  • 批准号:
    1232018
  • 财政年份:
    2012
  • 资助金额:
    $ 8.28万
  • 项目类别:
    Standard Grant
The Science and Technology of Carbon Nanotube-Semiconductor Heterojunction Contact Devices
碳纳米管-半导体异质结接触器件科学与技术
  • 批准号:
    0824157
  • 财政年份:
    2008
  • 资助金额:
    $ 8.28万
  • 项目类别:
    Standard Grant
Construction of a Nanotube Tip Mounting Workbench for Generation of Nanoscale Probes for Research and Education
构建纳米管尖端安装工作台,用于生成用于研究和教育的纳米级探针
  • 批准号:
    9975833
  • 财政年份:
    1999
  • 资助金额:
    $ 8.28万
  • 项目类别:
    Standard Grant

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