Interface Physics and Device Technologies of Carbon-Nanostructure-Enabled Vertical Heterojunction Devices

碳纳米结构垂直异质结器件的界面物理和器件技术

基本信息

  • 批准号:
    1232018
  • 负责人:
  • 金额:
    $ 36万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2012
  • 资助国家:
    美国
  • 起止时间:
    2012-09-01 至 2017-08-31
  • 项目状态:
    已结题

项目摘要

The objective of this program is to advance the fundamental understanding and further develop new device architectures based on the use of low dimensional carbons (nanotubes, graphene) as electronically gated contact electrodes. The PIs have already demonstrated new devices exploiting the phenomenon. Specifically, a new architecture transistor that overcomes the inherent mobility limitations of organic semiconductors and a solar cell having a power conversion efficiency that can be dramatically improved by electronic gating. The intellectual merit is in the promise to 1) deepen the theoretical understanding of the phenomenon by developing a comprehensive model that captures essential physics of low-dimensional-carbon-contacts and related vertical devices, 2) provide design rules for exploiting this property in devices that establish the benefits and the limits, and 3) expand the range of the devices in new directions and from individual components to functional circuits (e.g. inverters, logic gates, ring oscillator). Broader impacts: organic semiconductors have physical limitations that bound the range of what they can do. The transformative aspect of this project is that the devices to be developed will greatly extend that range allowing for faster, higher density, plastic electronic circuits, brighter, more energy efficient displays, and higher efficiency solar cells. The educational and outreach activities will include translating the research progress to the undergraduate and graduate course materials, developing a web-based learning module, supervising minority and female student research through the outreach programs in University of Florida, and providing early exposure of K-12 students to electronics technology through the Student Science Training Program.
该计划的目标是推进基本理解,并进一步开发基于使用低维碳(纳米管,石墨烯)作为电子门控接触电极的新器件架构。PI已经展示了利用这种现象的新设备。具体来说,是一种克服有机半导体固有迁移率限制的新架构晶体管和具有可以通过电子门控显着提高功率转换效率的太阳能电池。智力价值在于承诺:1)通过开发一个全面的模型来加深对这种现象的理论理解,该模型捕捉了低维碳接触和相关垂直器件的基本物理学,2)为在建立益处和限制的器件中利用这种特性提供设计规则,以及3)在新的方向上扩展器件的范围,并且从单个组件扩展到功能电路(例如,反相器、逻辑门、环形振荡器)。更广泛的影响:有机半导体具有物理限制,限制了它们可以做的范围。该项目的变革性方面是,待开发的设备将大大扩展该范围,允许更快,更高密度,塑料电子电路,更亮,更节能的显示器和更高效的太阳能电池。教育和推广活动将包括将研究进展转化为本科和研究生课程材料,开发基于网络的学习模块,通过佛罗里达大学的推广计划监督少数民族和女学生的研究,并通过学生科学培训计划为K-12学生提供早期接触电子技术的机会。

项目成果

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Andrew Rinzler其他文献

Andrew Rinzler的其他文献

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{{ truncateString('Andrew Rinzler', 18)}}的其他基金

The Science and Technology of Carbon Nanotube-Semiconductor Heterojunction Contact Devices
碳纳米管-半导体异质结接触器件科学与技术
  • 批准号:
    0824157
  • 财政年份:
    2008
  • 资助金额:
    $ 36万
  • 项目类别:
    Standard Grant
NER: Optical Modulation by Field Gated Transparency
NER:通过场选通透明度进行光学调制
  • 批准号:
    0210574
  • 财政年份:
    2002
  • 资助金额:
    $ 36万
  • 项目类别:
    Standard Grant
Construction of a Nanotube Tip Mounting Workbench for Generation of Nanoscale Probes for Research and Education
构建纳米管尖端安装工作台,用于生成用于研究和教育的纳米级探针
  • 批准号:
    9975833
  • 财政年份:
    1999
  • 资助金额:
    $ 36万
  • 项目类别:
    Standard Grant

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