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SBIR Phase I: Liquid Phase Epitaxy of Potassium Tantalum Niobate on Low Dielectric Constant Substrates

SBIR Phase I: Liquid Phase Epitaxy of Potassium Tantalum Niobate on Low Dielectric Constant Substrates
SBIR 第一阶段:低介电常数衬底上铌酸钾钽的液相外延
批准号:
0215046
负责人:
Vincent Fratello
金额:
$10.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2002
资助国家:
美国
项目状态:
已结题
起止时间:
2002-07-01 至 2002-12-31

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中文摘要
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英文摘要
This Small Business Innovation Research (SBIR) Phase I project will develop the Liquid Phase Epitaxy (LPE) of potassium tantalum niobate (KTN) on a cubic perovskite substrate. This film material will have much higher electrooptic coefficients than current generation lithium niobate waveguides. This project proposes to develop new, low dielectric constant substrate materials that will enable better matching of the effective microwave dielectric constant to the optical dielectric constant of the film material and lower bias fields. In Phase I, the researchers will identify congruently melting substrate materials with suitable lattice parameter match to KTN that can be grown by the Czochralski method. Various flux systems and growth conditions will be tested to find those most conducive to LPE growth of good quality films. Electrooptic devices are used in communications, analog and digital signal processing, information processing, optical computing and sensing. Devices include phase and amplitude modulators, multiplexers, switch arrays, couplers, polarization controllers, deflectors, correlators and sensors. The proposed work will enable electrooptic modulators and innovative new device applications with lower costs, smaller footprints and lower power budgets. All this contributes to improvements of the infrastructure of the Internet and more rapid, lower cost deployment, especially in the local loop.
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