Optical Studies of High-field Electron and Hole Transport in Nitride-based Wide Bandgap Semiconductor Nanostructures

氮化物宽带隙半导体纳米结构中高场电子和空穴传输的光学研究

• 批准号: 0305147
• 负责人: Kong-Thon Tsen
• 金额: $ 15.65万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-07-15 至 2007-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0305147&HistoricalAwards=false
• 关键词: Optical; Studies; field; Electron; Hole

This project addresses high-field carrier transient transport in nitride-based wide bandgap semiconductor nanostructures. The approach is to conduct systematic studies of transient electron and hole transport properties such as velocity overshoot and phonon dynamics in nitride-based wide bandgap semiconductor nanostructures by using time-resolved, sub-picosecond Raman spectroscopy. Goals are to achieve greater understanding of fundamental phenomena to define optimal device operation conditions, and to provide the basis for the design of a new class of high performance electronic devices. %%% An important impact of the project is in education and human resource development through the integration of research and education. The proposed research program will enhance the PI's student mentorship activities and increase chances of attracting minority students pursuing advanced degrees at ASU. The proposed research program will further enhance the existing infrastructure of both nanostructured materials as well as wide bandgap semiconductors having advantages in computing and signal processing technologies. ***

本计画探讨氮化物基宽带隙半导体奈米结构之高场载子瞬态输运。采用时间分辨亚皮秒拉曼光谱技术对氮化物基宽带隙半导体纳米结构中的瞬态电子和空穴输运特性如速度过冲和声子动力学进行了系统研究。目标是实现对基本现象的更好理解，以定义最佳器件操作条件，并为设计新一类高性能电子器件提供基础。 该项目的一个重要影响是通过研究和教育的结合，在教育和人力资源开发方面。拟议的研究计划将加强PI的学生导师活动，并增加吸引少数民族学生在亚利桑那州立大学攻读高级学位的机会。拟议的研究计划将进一步加强现有的基础设施的纳米结构材料以及宽带隙半导体具有优势的计算和信号处理技术。***