Charge Imaging Electrons in Nanoscale Systems

纳米级系统中的电荷成像电子

• 批准号: 0305461
• 负责人: Stuart Tessmer
• 金额: $ 31.5万
• 依托单位: Michigan State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-08-01 至 2007-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0305461&HistoricalAwards=false
• 关键词: Charge; Imaging; Electrons; Nanoscale; Systems

This individual investigator award supports a project that exploits a novel technique, charge accumulation imaging (CAI) to probe the quantum mechanics of nanoelectronic systems in GaAs-AlGaAs heterostructures. CAI is a scanning probe method that permits minute amounts of electrical charge to be resolved with high spatial resolution (about 50 nm) in a cryogenic environment. By probing the spatial characteristics of the ground state of the 2D electron system and the energy levels of coupled quantum dots, nanostructures with confinement in all three directions, the experiments probe the nature of electron-electron interactions, and their interplay with defects. In addition to the contributions to basic science, the graduate and undergraduate students who will perform this research will receive a valuable education in advanced scanning probe and surface science techniques. Moreover, we plan to construct an educational scanning probe microscope to be showcased in the Michigan State University Science Theatre. Understanding the nature of electrons confined inside semiconductors to nanometer lengths has become increasingly essential as integrated circuits continue to rapidly scale down in size. Advanced microscopic techniques sensitive to the electronic structure will likely play key roles in developing future nanoelectronic devices. This research applies such a technique, Charge Accumulation Imaging, to probe nanoscale electronic systems formed in the semiconductor GaAs. By mapping out the electric field emanating from the semiconductor's surface, the technique can resolve the behavior of electrons inside the nanosystem, despite the fact that it is buried beneath the surface. The goal of the project is to investigate the nature of interactions between electrons, and their interplay with defects and impurities within the semiconductor. The research provides a challenging training ground for graduate and undergraduate students, as they master advanced microscopy and semiconductor microfabrication techniques. Moreover, we plan to construct an educational scanning probe microscope to be showcased in the Michigan State University Science Theatre. This demonstration will literally bring a hands-on introduction to nanotechnology for students in grades 6-12.

该个人研究者奖支持一个项目，该项目利用一种新技术，电荷积累成像（CAI）来探测GaAs-AlGaAs异质结构中纳米电子系统的量子力学。CAI是一种扫描探针方法，允许在低温环境中以高空间分辨率（约50纳米）分辨微量电荷。通过探测二维电子系统基态的空间特征和耦合量子点的能级，在三个方向上都有约束的纳米结构，实验探索了电子-电子相互作用的本质，以及它们与缺陷的相互作用。除了对基础科学的贡献外，从事这项研究的研究生和本科生将获得先进扫描探针和表面科学技术的宝贵教育。此外，我们计划建造一个教育扫描探针显微镜，将在密歇根州立大学科学剧院展出。随着集成电路的尺寸继续迅速缩小，了解半导体内部纳米长度的电子的性质变得越来越重要。对电子结构敏感的先进显微技术可能在未来纳米电子器件的开发中发挥关键作用。本研究应用这种技术，电荷积累成像，探测在半导体砷化镓中形成的纳米级电子系统。通过绘制半导体表面发出的电场，该技术可以解决纳米系统内部电子的行为，尽管它被埋在表面之下。该项目的目标是研究电子之间相互作用的本质，以及它们与半导体中缺陷和杂质的相互作用。这项研究为研究生和本科生提供了一个具有挑战性的训练场地，因为他们掌握了先进的显微镜和半导体微加工技术。此外，我们计划建造一个教育扫描探针显微镜，将在密歇根州立大学科学剧院展出。这个演示将为6-12年级的学生带来纳米技术的实践介绍。