X-Ray Microbeam Studies of Electromigration

电迁移的 X 射线微束研究

• 批准号: 0312189
• 负责人: George Cargill
• 金额: --
• 依托单位: Lehigh University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-07-15 至 2008-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0312189&HistoricalAwards=false
• 关键词: Ray; Microbeam; Studies; Electromigration

The grant explores to advance understanding of electromigration in copper-based conductor lines similar to those used in advanced integrated circuits through studies based on x-ray microbeam diffraction and fluorescence and other experimental techniques, together with microstructure-dependent, grain scale models, and numerical simulations. The objective of the study is to investigate the role of interface and grain boundary structure, composition, grain orientations, and strain in electromigration. The aim is to examine if the phenomenological descriptions of electromigration, which have been widely applied to electromigration in Al-based conductor lines, are also valid for electromigration in Cu-based conductor lines. Along with exploring the role of impurities in electromigration for Cu-based conductor lines, the research includes detailed, three-dimensional models at the grain scale to test model assumptions by comparison with experimental results. In addition, the relevance will be examined of currently available ab initio calculations of Z* to electromigration phenomena which are now experimentally accessible in Cu-based conductor lines.The research results are applicable to advanced microelectronic packaging utilizing Cu-interconnects. Through cooperation between research groups at Lehigh University and at Rensselaer Polytechnic Institute, and through contacts with various collaborators at IBM and at Oak Ridge, Brookhaven, and Argonne National Laboratories, graduate students will gain experience with theoretical and experimental methods used in studying electromigration, and they will learn to work in university, industrial, and government laboratory environments. Undergraduates will participate through a research option course at Lehigh for seniors who are considering graduate studies, a computational methods course at RPI, and as summer interns at Lehigh and RPI.The grant explores to advance understanding of electromigration in copper-based conductor lines similar to those used in advanced integrated circuits through studies based on x-ray microbeam diffraction and fluorescence and other experimental techniques, together with microstructure-dependent, grain scale models, and numerical simulations. The objective of the study is to investigate the role of interface and grain boundary structure, composition, grain orientations, and strain in electromigration. The aim is to examine if the phenomenological descriptions of electromigration, which have been widely applied to electromigration in Al-based conductor lines, are also valid for electromigration in Cu-based conductor lines. Along with exploring the role of impurities in electromigration for Cu-based conductor lines, the research includes detailed, three-dimensional models at the grain scale to test model assumptions by comparison with experimental results. In addition, the relevance will be examined of currently available ab initio calculations of Z* to electromigration phenomena which are now experimentally accessible in Cu-based conductor lines.The research results are applicable to advanced microelectronic packaging utilizing Cu-interconnects. Through cooperation between research groups at Lehigh University and at Rensselaer Polytechnic Institute, and through contacts with various collaborators at IBM and at Oak Ridge, Brookhaven, and Argonne National Laboratories, graduate students will gain experience with theoretical and experimental methods used in studying electromigration, and they will learn to work in university, industrial, and government laboratory environments. Undergraduates will participate through a research option course at Lehigh for seniors who are considering graduate studies, a computational methods course at RPI, and as summer interns at Lehigh and RPI.***

该补助金旨在通过基于X射线微束衍射和荧光以及其他实验技术的研究，以及微结构相关的晶粒尺度模型和数值模拟，来促进对类似于先进集成电路中使用的铜基导体线路中的电迁移的理解。研究的目的是探讨界面和晶界结构，成分，晶粒取向和应变的电迁移的作用。其目的是检查，如果电迁移的唯象描述，这已被广泛应用于铝基导线的电迁移，也是有效的铜基导线的电迁移。沿着探索铜基导体线的电迁移中杂质的作用，研究包括详细的，在晶粒尺度的三维模型，通过与实验结果的比较来测试模型假设。此外，相关性将检查目前可用的从头计算的Z* 的电迁移现象，现在是实验上可访问的铜基导体line.The研究结果是适用于先进的微电子封装利用铜互连。通过在利哈伊大学和伦斯勒理工学院的研究小组之间的合作，并通过在IBM和在橡树岭，布鲁克海文，和阿贡国家实验室的各种合作者的联系，研究生将获得在研究电迁移的理论和实验方法的经验，他们将学习在大学，工业和政府实验室环境中工作。 本科生将通过在利哈伊的研究选择课程，谁是考虑研究生课程，在RPI的计算方法课程，并在利哈伊和RPI的暑期实习生参加。该补助金旨在通过基于X射线微束衍射和荧光和其他实验技术的研究，促进对类似于先进集成电路中使用的铜基导体线路中的电迁移的理解，连同微观结构相关的，晶粒尺度模型，和数值模拟。研究的目的是探讨界面和晶界结构，成分，晶粒取向和应变的电迁移的作用。其目的是检查，如果电迁移的唯象描述，这已被广泛应用于铝基导线的电迁移，也是有效的铜基导线的电迁移。沿着探索铜基导体线的电迁移中杂质的作用，研究包括详细的，在晶粒尺度的三维模型，通过与实验结果的比较来测试模型假设。此外，相关性将检查目前可用的从头计算的Z* 的电迁移现象，现在是实验上可访问的铜基导体line.The研究结果是适用于先进的微电子封装利用铜互连。通过在利哈伊大学和伦斯勒理工学院的研究小组之间的合作，并通过在IBM和在橡树岭，布鲁克海文，和阿贡国家实验室的各种合作者的联系，研究生将获得在研究电迁移的理论和实验方法的经验，他们将学习在大学，工业和政府实验室环境中工作。 本科生将通过在利哈伊的研究选择课程谁正在考虑研究生学习，在RPI计算方法课程，并在利哈伊和RPI暑期实习生参加。