Gain and Recombination in InGaAsN and Their Impact on the Laser Output Behavior
InGaAsN 中的增益和复合及其对激光输出行为的影响
基本信息
- 批准号:0314410
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2003
- 资助国家:美国
- 起止时间:2003-08-01 至 2007-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The scientific objective of the proposed research is to investigate the dominant recombination processes and the mechanisms that give rise to optical gain in InGaAsN/GaAs heterostructures lasers, and determine their impact on the laser output behavior. To accomplish this, the PI's will perform a comprehensive set of experiments on optimized ridge waveguide structures that include carrier lifetime, gain, gain recovery dynamics, and spontaneous emission measurement at different bias and temperature conditions. They will complement these investigations with optical spectroscopic studies of the heterostructure materials that will reveal the salient features of the electronic structure modifications upon nitrogen incorporation. The results from these experiments will allow us to build a model of the gain, determine the carrier-current density relations and thus develop a thorough understanding of the role of gain and recombination in affecting the threshold current and external efficiency of dilute nitride lasers. To complete these studies we also propose to assess the high speed potential of dilute nitride lasers through investigations of the intrinsic modulation bandwidth. This research brings together the CSU group whose strength is in the characterization of laser diodes and their heterostructures, and the Sandia's groups specialists in the growth of III-V nitrides and modeling of fundamental laser diode behavior respectively. The synergy of these groups with complementary expertise, will create an exciting intellectual exchange that will greatly benefit the education of the graduate and undergraduate students participating in the project. The proposed research will offer outstanding opportunities for the training of students at all levels. Graduate students will learn the arts of device fabrication, and characterization using high frequency electronics, optics and ultrafast techniques. They will also acquire in-depth understanding of the material's optical and electronic properties and develop skills to simulate basic laser diode behavior. Furthermore, the research will offer unique opportunities for the development of leadership skills through participation in conference presentations, manuscript preparation and mentoring activities. Exciting learning opportunities will also be available for undergraduate students who will take part in device fabrication efforts and in performing some of the simpler device and material characterization experiments. In undergraduate recruitment, Prof. Menoni will actively collaborate with the Louis Stokes Alliance for Minority Participation (COAMP) and the College of Engineering Women and Minorities Organization to attract talented students from traditionally underrepresented minority groups in the science and engineering. Basic research in laser diodes will also open up learning opportunities for K-12 students, who will be recruited from local high schools to participate in a month-long summer research experiences.
该研究的科学目标是研究InGaAsN/GaAs异质结构激光器中主要的复合过程和产生光学增益的机制,并确定它们对激光输出行为的影响。为了实现这一目标,PI将对优化的脊形波导结构进行一系列全面的实验,包括载流子寿命、增益、增益恢复动力学以及在不同偏压和温度条件下的自发辐射测量。 他们将补充这些调查的异质结构材料,将揭示氮掺入后的电子结构修饰的显着特点的光学光谱研究。从这些实验的结果将使我们能够建立一个模型的增益,确定的载流子电流密度的关系,从而发展一个深入的了解的作用,增益和复合的影响阈值电流和外部效率的稀氮化物激光器。 为了完成这些研究,我们还建议通过本征调制带宽的调查来评估稀氮化物激光器的高速潜力。 这项研究汇集了CSU集团,其优势在于激光二极管及其异质结构的表征,以及Sandia集团分别在III-V氮化物生长和基本激光二极管行为建模方面的专家。 这些具有互补专业知识的团体的协同作用将创造一个令人兴奋的智力交流,这将大大有利于参与该项目的研究生和本科生的教育。 拟议的研究将为各级学生的培训提供极好的机会。 研究生将学习设备制造的艺术,以及使用高频电子,光学和超快技术的表征。 他们还将深入了解材料的光学和电子特性,并培养模拟基本激光二极管行为的技能。 此外,研究将提供独特的机会,通过参加会议演讲,手稿准备和指导活动的领导技能的发展。 令人兴奋的学习机会也将提供给本科生谁将参加设备制造工作,并在执行一些简单的设备和材料表征实验。 在本科生招生方面,Menoni教授将积极与Louis Stokes少数民族参与联盟(COAMP)和工程妇女和少数民族组织学院合作,以吸引来自传统上代表性不足的少数民族的优秀学生在科学和工程领域。 激光二极管的基础研究也将为K-12学生提供学习机会,他们将从当地高中招募,参加为期一个月的夏季研究体验。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Carmen Menoni其他文献
Low Mechanical Loss math
低机械损耗数学
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
G. Vajente;Le Yang;Aaron Davenport;Mariana Fazio;A. Ananyeva;Liyuan Zhang;Garilynn Billingsley;K. Prasai;Ashot Markosyan;R. Bassiri;M. Fejer;M. Chicoine;F. Schiettekatte;Carmen Menoni;Phys. Rev;Lett - 通讯作者:
Lett
Carmen Menoni的其他文献
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{{ truncateString('Carmen Menoni', 18)}}的其他基金
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合作研究:涂料研究中心
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2309297 - 财政年份:2023
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2110101 - 财政年份:2021
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2012024 - 财政年份:2020
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- 批准号:
1708010 - 财政年份:2017
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Towards Ultrastable Amorphous Coatings for LIGO
LIGO 超稳定非晶涂层的研究
- 批准号:
1710957 - 财政年份:2017
- 资助金额:
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Continuing Grant
Ion Sculpting of Multilayer Gratings for Extreme Ultraviolet Applications
用于极紫外应用的多层光栅的离子雕刻
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1508745 - 财政年份:2015
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SBIR Phase I: Defect-Free Nano-Scale Printing: An Enabling Technology for Nanofabrication
SBIR 第一阶段:无缺陷纳米级印刷:纳米制造的使能技术
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1248924 - 财政年份:2013
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Carrier Transport Effects on Compressively Strained InAsP Lasers
压缩应变 InAsP 激光器的载流子传输效应
- 批准号:
9803066 - 财政年份:1998
- 资助金额:
-- - 项目类别:
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Development of Novel Instrumentation for the Growth of Low Dimensional Structures Using Molecular Beam Epitaxy
利用分子束外延生长低维结构的新型仪器的开发
- 批准号:
9871210 - 财政年份:1998
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CAREER: Enhancement Plan - Research on Blue Semiconductor Lasers and Early Motivation of Electrical Engineering Students
职业:增强计划 - 蓝色半导体激光器研究和电气工程专业学生的早期激励
- 批准号:
9502888 - 财政年份:1995
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-- - 项目类别:
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