Gain and Recombination in InGaAsN and Their Impact on the Laser Output Behavior
Gain and Recombination in InGaAsN and Their Impact on the Laser Output Behavior
批准号:
0314410
负责人:
Carmen Menoni
金额:
$0.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2003
资助国家:
美国
项目状态:
已结题
起止时间:
2003-08-01 至 2007-07-31
中文摘要
本研究的科学目的是研究InGaAsN/GaAs异质结构激光器中主要的复合过程和产生光增益的机制,并确定它们对激光输出行为的影响。为了实现这一目标,PI将对优化的脊波导结构进行一套全面的实验,包括载波寿命、增益、增益恢复动态以及在不同偏置和温度条件下的自发发射测量。他们将用异质结构材料的光谱学研究来补充这些研究,这将揭示氮掺入后电子结构修饰的显著特征。这些实验的结果将使我们能够建立增益模型,确定载流子电流密度关系,从而深入了解增益和重组在影响稀氮激光器阈值电流和外部效率方面的作用。为了完成这些研究,我们还建议通过研究本征调制带宽来评估稀释氮化物激光器的高速潜力。这项研究汇集了科罗拉多州立大学的团队,他们的优势是激光二极管及其异质结构的表征,桑迪亚大学的团队分别在III-V氮化物的生长和激光二极管基本行为的建模方面的专家。这些具有互补专业知识的小组的协同作用,将创造一个令人兴奋的知识交流,这将极大地有利于参与该项目的研究生和本科生的教育。拟议的研究将为各级学生的培训提供良好的机会。研究生将学习器件制造艺术,并使用高频电子,光学和超快技术进行表征。他们还将深入了解材料的光学和电子特性,并培养模拟激光二极管基本行为的技能。此外,研究将提供独特的机会,通过参与会议演讲,手稿准备和指导活动的领导技能的发展。本科生也将获得令人兴奋的学习机会,他们将参与器件制造工作,并执行一些更简单的器件和材料表征实验。在招收本科生方面,梅诺尼教授将积极与路易斯·斯托克斯少数族裔参与联盟(COAMP)和工程学院妇女和少数族裔组织合作,以吸引在科学和工程领域传统上代表性不足的少数族裔的优秀学生。激光二极管的基础研究也将为K-12学生提供学习机会,他们将从当地高中招募,参加为期一个月的暑期研究体验。
英文摘要
The scientific objective of the proposed research is to investigate the dominant recombination processes and the mechanisms that give rise to optical gain in InGaAsN/GaAs heterostructures lasers, and determine their impact on the laser output behavior. To accomplish this, the PI's will perform a comprehensive set of experiments on optimized ridge waveguide structures that include carrier lifetime, gain, gain recovery dynamics, and spontaneous emission measurement at different bias and temperature conditions. They will complement these investigations with optical spectroscopic studies of the heterostructure materials that will reveal the salient features of the electronic structure modifications upon nitrogen incorporation. The results from these experiments will allow us to build a model of the gain, determine the carrier-current density relations and thus develop a thorough understanding of the role of gain and recombination in affecting the threshold current and external efficiency of dilute nitride lasers. To complete these studies we also propose to assess the high speed potential of dilute nitride lasers through investigations of the intrinsic modulation bandwidth. This research brings together the CSU group whose strength is in the characterization of laser diodes and their heterostructures, and the Sandia's groups specialists in the growth of III-V nitrides and modeling of fundamental laser diode behavior respectively. The synergy of these groups with complementary expertise, will create an exciting intellectual exchange that will greatly benefit the education of the graduate and undergraduate students participating in the project. The proposed research will offer outstanding opportunities for the training of students at all levels. Graduate students will learn the arts of device fabrication, and characterization using high frequency electronics, optics and ultrafast techniques. They will also acquire in-depth understanding of the material's optical and electronic properties and develop skills to simulate basic laser diode behavior. Furthermore, the research will offer unique opportunities for the development of leadership skills through participation in conference presentations, manuscript preparation and mentoring activities. Exciting learning opportunities will also be available for undergraduate students who will take part in device fabrication efforts and in performing some of the simpler device and material characterization experiments. In undergraduate recruitment, Prof. Menoni will actively collaborate with the Louis Stokes Alliance for Minority Participation (COAMP) and the College of Engineering Women and Minorities Organization to attract talented students from traditionally underrepresented minority groups in the science and engineering. Basic research in laser diodes will also open up learning opportunities for K-12 students, who will be recruited from local high schools to participate in a month-long summer research experiences.
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