SGER: Flexible Thin Film Transistors Using Low Temperature Chemical Bath Deposited Inorganic Semiconductors

SGER：使用低温化学浴沉积无机半导体的柔性薄膜晶体管

• 批准号: 0331515
• 负责人: Chih-hung Chang
• 金额: $ 7万
• 依托单位: Oregon State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-05-15 至 2004-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0331515&HistoricalAwards=false
• 关键词: SGER; Flexible; Thin; Film; Transistors

The success of silicon technology over the last few decades has had an enormous impact on our everyday life. Inexpensive and flexible electronic devices will clearly add a new dimension to this continuing revolution. In the last few years, researchers have been taking several routes to realize this dream. Organic semiconductors with their inherent advantage of flexibility have been a popular choice in the pursuit of flexible electronics. However, the low carrier mobility in organic semiconductors is a main obstacle to this approach. On the other hand, it is well known that most inorganic semiconductors have higher carrier mobilities. Herein, we propose a program of research that exploits a novel hybrid approach of using flexible (polymeric) substrates with thin film, high mobility inorganic materials for the active devices. We propose to develop a completely low temperature ( 200 o C) process compatible with the low melting temperatures of polymeric substrates. The thin film inorganic materials will be deposited by low temperature chemical bath deposition (CBD). Several novel device designs based on both MOSFETs and MESFETs that can be realized in an all-low temperature process are proposed. This work will build on our expertise of the successful fabrication of CdS thin film transistor (TFTs) on Si substrates, which show very promising electrical performance. The main research goals are as follows:o Fabricate flexible MOSFET using Al2O3 / Ta2O5 as gate insulator;o Fabricate flexible Schottky gate MESFETs;o Integrate microcontact printing with CBD for device fabrication;o Develop a low cost transistor lab for educational purposes.The research in this proposal will be tightly integrated with a significant educational component. The PI proposes to involve undergraduate and high school students in this research program. Our proposed device fabrication techniques using CBD and soft-lithography can be easily set up even in a non-clean room high school chemistry laboratory. This would motivate high school students towards advanced research as proposed here. The current research program will be integrated into the outreach programs which are currently in place at Oregon State University: (1) Summer Experience in Science and Engineering for Youth (SESEY), and (2) Saturday Academy and Apprenticeships in Science and Engineering (ASE) Program. Each of these programs has a somewhat different focus, but share several common underlying themes: exposure of high school students to careers in science and engineering through research experiences. The PI strongly encourages minorities, women and members of under-represented groups to participate. The PI also proposes to maintain an up-to-date status of the accomplishments of the project on the world-wide-web for the benefit of anyone interested in this field.

过去几十年来，硅技术的成功对我们的日常生活产生了巨大的影响。廉价而灵活的电子设备显然将为这场持续的革命增添一个新的维度。在过去的几年里，研究人员一直在采取多种途径来实现这个梦想。有机半导体以其固有的柔性优势成为柔性电子产品的热门选择。 然而，有机半导体中的低载流子迁移率是这种方法的主要障碍。另一方面，众所周知，大多数无机半导体具有较高的载流子迁移率。在此，我们提出了一个研究方案，利用一种新的混合方法，使用柔性（聚合物）基板与薄膜，高迁移率的无机材料的有源器件。我们建议开发一种完全低温（200 ° C）工艺，该工艺与聚合物基材的低熔融温度兼容。薄膜无机材料将通过低温化学浴沉积（CBD）沉积。提出了几种基于MOSFET和MESFER的新型器件设计，可以在全低温工艺中实现。这项工作将建立在我们的专业知识的成功制造的CdS薄膜晶体管（TFT）的硅衬底上，这显示出非常有前途的电气性能。主要研究目标如下：o以Al_2 O_3/Ta_2 O_5为闸极绝缘体制作可挠性MOSFET;o制作可挠性肖特基闸极MESFFET;o整合微接触印刷技术与CBD技术于元件制作;o发展低成本的教育用晶体管实验室。PI建议让本科生和高中生参与这项研究计划。我们提出的器件制造技术，使用CBD和软光刻可以很容易地设置，即使在非洁净室高中化学实验室。这将激励高中学生对先进的研究建议在这里。目前的研究计划将被整合到目前在俄勒冈州州立大学的推广计划中：（1）青年科学与工程暑期体验（SESEY），（2）科学与工程周六学院和学徒（ASE）计划。每个项目都有不同的侧重点，但有几个共同的基本主题：通过研究经验让高中生接触科学和工程职业。PI强烈鼓励少数民族、妇女和代表性不足的群体成员参与。PI还建议在万维网上保持项目成就的最新状态，以使对该领域感兴趣的任何人受益。