Optical: Collaborative Research: Bandgap Engineered Ultrafast Heterostructure Avalanche Photodiodes

光学:合作研究:带隙工程超快异质结构雪崩光电二极管

基本信息

  • 批准号:
    0334771
  • 负责人:
  • 金额:
    $ 18.5万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2003
  • 资助国家:
    美国
  • 起止时间:
    2003-10-01 至 2006-09-30
  • 项目状态:
    已结题

项目摘要

0334771CampbellThe goal of this collaborative program is to develop high-speed, ultra-low-noise avalanche photodiodes (APDs) for high-capacity fiber optic communication links. The program will have two main thrusts: (1) a theoretical and simulation effort to design and optimize the high-performance APDs and (2) an experimental program to fabricate, characterize, and distribute the APDs. Commercially-available APDs have been widely deployed in 2.5 GB/s optical receivers but have not achieved the anticipated performance advantage at 10 GB/s and it appears unequivocal that they will not be adequate for future 40 GB/s systems. The PIs propose to significantly improve APD performance by introducing new structures and materials based on APD technologies that have recently been developed by the PIs. These include (1) the development of evanescently coupled waveguide structures and (2) the incorporation of optimized impact-ionization engineered multiplication regions. The availability of high-performance APD receivers at 40GB/s as well as 3 to 5 dB improvements in the sensitivity of 10GB/s receivers will have a momentous impact on high-capacity optical transmission systems.An important feature of the program is the development of human resources who will be trained to work in this critically important field. The students who work on this project will become experts in their particular area and will gain extensive understanding in the field of optoelectronics. Of particular note, one of the participating institutions, the University of New Mexico (UNM) is a minority-serving institution (40% of the undergraduate students belong to minority groups including members of several Indian tribes), which gives the PIs the opportunity to recruit undergraduate and graduate students from a pool of under-represented groups. The PIs continue to bring into the classroom relevant elements of their research experience. Both of the PIs' institutions have been actively involved in and advocating web-enhanced instruction.
0334771 Campbell该合作计划的目标是开发用于大容量光纤通信链路的高速、超低噪声雪崩光电二极管(APD)。该计划将有两个主要目标:(1)设计和优化高性能APD的理论和模拟工作,以及(2)制造,表征和分配APD的实验计划。市售APD已被广泛部署在2.5 GB/s光接收机中,但在10 GB/s时尚未实现预期的性能优势,而且它们显然不足以用于未来的40 GB/s系统。PI建议通过引入基于PI最近开发的APD技术的新结构和材料来显著提高APD性能。这些包括(1)渐逝耦合波导结构的发展和(2)优化的碰撞电离工程倍增区的纳入。40 GB/s的高性能APD接收机的可用性以及10 GB/s接收机灵敏度的3至5 dB改进将对大容量光传输系统产生重大影响。该计划的一个重要特点是开发人力资源,他们将接受培训,在这一至关重要的领域工作。从事该项目的学生将成为其特定领域的专家,并将在光电子领域获得广泛的了解。特别值得注意的是,参与机构之一,新墨西哥州大学(UNM)是一个少数民族服务机构(40%的本科生属于少数民族群体,包括几个印第安部落的成员),这使PI有机会从代表性不足的群体中招募本科生和研究生。PI继续将其研究经验的相关元素带入课堂。这两个PI的机构一直积极参与和倡导网络增强教学。

项目成果

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Joe Campbell其他文献

Design of a compact, radiation tolerant AlGaAs Geiger photodiode
  • DOI:
    10.1016/j.nima.2024.169160
  • 发表时间:
    2024-04-01
  • 期刊:
  • 影响因子:
  • 作者:
    Matthew Downing;Erik B. Johnson;Joe Campbell;Adam A. Dadey
  • 通讯作者:
    Adam A. Dadey
A Hypertensive Child With Irritability and a Rash
患有烦躁和皮疹的高血压儿童
  • DOI:
  • 发表时间:
    2012
  • 期刊:
  • 影响因子:
    1.4
  • 作者:
    L. French;Joe Campbell;R. Hendrickson
  • 通讯作者:
    R. Hendrickson
More Trouble for Direct Source Incompatibilism: Reply to Yang
Keith Lehrer on Compatibilism
基思·莱勒 (Keith Lehrer) 谈兼容性
  • DOI:
    10.1007/s10892-018-9269-1
  • 发表时间:
    2018
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Joe Campbell;K. Lehrer
  • 通讯作者:
    K. Lehrer

Joe Campbell的其他文献

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{{ truncateString('Joe Campbell', 18)}}的其他基金

Collaborative Research: Impact Ionization Engineered and Nanoscale Quantum-dot Based Avalanche Photodiodes for Reliable Near- to Long-wave Infrared Photon Counting
合作研究:碰撞电离工程和基于纳米级量子点的雪崩光电二极管,用于可靠的近波到长波红外光子计数
  • 批准号:
    0601927
  • 财政年份:
    2006
  • 资助金额:
    $ 18.5万
  • 项目类别:
    Continuing Grant
Resonant-Cavity Photodetectors
谐振腔光电探测器
  • 批准号:
    9629636
  • 财政年份:
    1997
  • 资助金额:
    $ 18.5万
  • 项目类别:
    Continuing Grant
Ge(x)Si(1-x)/Si Opoelectronic Devices and Integrated Circuits
Ge(x)Si(1-x)/Si光电器件和集成电路
  • 批准号:
    9101187
  • 财政年份:
    1992
  • 资助金额:
    $ 18.5万
  • 项目类别:
    Continuing Grant

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