Ge(x)Si(1-x)/Si Opoelectronic Devices and Integrated Circuits

提出的研究主要是开发实现GexSi1-x/Si光电器件和集成电路所需的材料，加工和器件技术。以前在这一领域的工作几乎完全依赖于III-V复合材料，如GaAs和InP。然而，最近在硅衬底上合成GexSi1-x外延层（单层和超晶格结构）的改进已经导致了一种可行且有吸引力的硅基替代品。此外，初步研究表明，在GexSi1-x超晶格结构中存在量子受限Stark效应和wanner -Stark局域化等超晶格效应。因此，将有可能首次在Si衬底上制造有源波导调制器和开关。该项目将利用标准硅集成电路技术的低成本、高产量和可靠的优点。该项目将有两个重点领域：(1)材料合成和表征；(2)GexSi1-x器件的设计、制造和表征。

The primary of the proposed research is to develop the materials, processing, and device technologies necessary for the realization of GexSi1-x/Si optoelectronic devices and integrated circuits. Previous work in this area has relied almost entirely on III-V compound materials such as GaAs and InP. Recent improvements in the synthesis of GexSi1-x epitaxial layers (both single layers and superlattice structures) on Si substrates, however, have resulted in a viable and attractive Si-based alternative. In addition, initial research indicates that superlattice effects such as the Quantum Confined Stark Effect and Wannier-Stark Localization are present in GexSi1-x superlattice structures. As a result, it will be possible, for the first time, to fabricate active waveguide modulators and switches on Si substrates. This program will take advantage of standard Si integrated circuit technology with its benefits of low cost, high yield, and proven reliability. The program will have two thrust areas: (1) materials synthesis and characterization and (2) design, fabrication, and characterization of GexSi1-x devices.