Ge(x)Si(1-x)/Si Opoelectronic Devices and Integrated Circuits

Ge(x)Si(1-x)/Si光电器件和集成电路

• 批准号: 9101187
• 负责人: Joe Campbell
• 金额: $ 27.81万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-01-15 至 1994-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9101187&HistoricalAwards=false
• 关键词: Ge; Si; Opoelectronic; Devices; Integrated

The primary of the proposed research is to develop the materials, processing, and device technologies necessary for the realization of GexSi1-x/Si optoelectronic devices and integrated circuits. Previous work in this area has relied almost entirely on III-V compound materials such as GaAs and InP. Recent improvements in the synthesis of GexSi1-x epitaxial layers (both single layers and superlattice structures) on Si substrates, however, have resulted in a viable and attractive Si-based alternative. In addition, initial research indicates that superlattice effects such as the Quantum Confined Stark Effect and Wannier-Stark Localization are present in GexSi1-x superlattice structures. As a result, it will be possible, for the first time, to fabricate active waveguide modulators and switches on Si substrates. This program will take advantage of standard Si integrated circuit technology with its benefits of low cost, high yield, and proven reliability. The program will have two thrust areas: (1) materials synthesis and characterization and (2) design, fabrication, and characterization of GexSi1-x devices.

本研究的主要目的是开发 材料、工艺和器件技术 实现GexSi_（1-x）/Si 光电器件和集成电路。 以前在这方面的工作几乎完全依赖于 在III-V族化合物材料如GaAs和 InP。 合成的最新进展 GexSi 1-x外延层（单层和 超晶格结构），然而， 已经产生了一种可行的和有吸引力的硅基 替代. 此外，初步研究表明， 超晶格效应，如量子 受限斯塔克效应与Wannier-Stark 在GexSi_（1-x）超晶格中存在局域化现象 结构. 因此，有可能，因为 首次制作有源波导调制器 并在Si衬底上进行开关。 此程序将 利用标准硅集成电路 该工艺具有成本低、产量高、 和可靠性。 该计划将有两个 重点领域：（1）材料合成和 表征和（2）设计、制造和 GexSi 1-x器件的特性。