SBIR Phase I: Advanced Ultra Violet (UV) Light Source for High-Precision, High-Resolution Photomask Metrology

SBIR 第一阶段：用于高精度、高分辨率光掩模计量的先进紫外线 (UV) 光源

• 批准号: 0339366
• 负责人: Andrew Merriam
• 金额: $ 10万
• 依托单位: ACTINIX
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-01-01 至 2004-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0339366&HistoricalAwards=false
• 关键词: SBIR; Phase; Advanced; Ultra; Violet

This Small Business Innovation Research (SBIR) Phase I project is for the construction of an ultra-high-resolution, high-precision phase-shift measurement tool suitable for metrology of advanced phase-shifting photomasks. A number of semiconductor manufacturers now expect to progress from the 90 nm through the 45 nm nodes using an exposure wavelength of 193 nm. Advanced photolithographic techniques are necessary to print these sub-wavelength features. Phase-shift photomasks, i.e., those in which the optical thickness, as well as the opacity is controlled, are a key reticle enhancement technology. Fast and accurate metrology of critical-layer phase-shift masks is becoming necessary, both for process control and repair validation, but the enabling tools do not yet exist. The goal of this SBIR Phase I project is to develop a new, solid-state, high-repetition-rate actinic 193.4 nm laser with high spatial coherence and stability. This illumination source will be integrated into an existing prototype microscope tool to demonstrate high-speed, highly precise phase metrology suitable for use in the 90, 65, and 45 nm node device generations. The project involves the design and construction of a novel optical-parametric-oscillator and a number of associated nonlinear frequency conversion elements.The commercial application of this project will be in the semiconductor lithography industry. The semiconductor industry roadmap for the 90 nm mode and beyond requires measurements of photomask optical path difference with sub-0.4 degrees precision. This metrology must be performed at resolution scales consistent with feature sizes of the respective technology nodes, and for both isolated and densely packed structures. No commercial devices yet exist which satisfy these demands. The high-repetition-rate actinic laser source described in this proposal is a key enabling technology for a new high-precision metrology tool. Further, as a high-power stand-alone source, the ultra-violet (UV) laser will meet the associated optical demands of advanced photolithography, including imaging, bulk material and coating analyses, and damage tests.

这个小型企业创新研究(SBIR)第一阶段项目是为了建造一种超高分辨率、高精度的相移测量工具，适用于先进的相移光掩模的测量。许多半导体制造商现在希望使用193 nm的曝光波长从90 nm节点发展到45 nm节点。印刷这些亚波长特征需要先进的光刻技术。相移光掩模是一种关键的掩模增强技术，即控制光学厚度和不透明度的掩模。对临界层相移掩模进行快速而准确的测量变得非常必要，无论是用于工艺控制还是修复验证，但实现工具还不存在。SBIR第一阶段项目的目标是开发一种新型的、固态、高重复频率、具有高空间相干性和稳定性的光化193.4 nm激光器。这种照明源将被集成到现有的原型显微镜工具中，以演示适合于90、65和45 nm节点器件代使用的高速、高精度相位测量。该项目涉及一种新型光学参数振荡器和一些相关的非线性频率转换元件的设计和制造。该项目的商业应用将在半导体光刻行业。90 nm及以上模式的半导体行业路线图要求测量精度低于0.4度的光掩模光程差。这种计量必须在与相应技术节点的特征尺寸一致的分辨率尺度上进行，并且对于孤立和密集填充的结构都是如此。目前还没有满足这些需求的商业设备。该方案中描述的高重复率光化光源是一种新的高精度计量工具的关键使能技术。此外，作为一种高功率独立光源，紫外线(UV)激光器将满足先进光刻技术的相关光学要求，包括成像、大宗材料和涂层分析以及损伤测试。