SBIR Phase I: High Throughput Screening of High Efficiency Spin Injection Materials in the Transparent Room Temperature Ferromagnetic Doped Indium Oxides

0340438这个小企业创新研究一期项目将研究高效旋喷材料。实现自旋控制器件实际实施的主要技术障碍之一是自旋注入接触材料的开发，该材料将有效地将自旋极化电子注入半导体。一种方法是开发室温软铁磁半导体。基于Intematix专有的材料组合研究技术，发现过渡金属掺杂的In2O3，众所周知的宽禁带半导体，具有无杂质，室温铁磁性和高溶解度的掺杂剂。随着许多新型稀释磁性半导体材料受到磁性杂质的困扰，掺杂In2O3的无杂质磁性为这种宽带隙半导体的自旋极化提供了重要的可能性。目标是实现一种薄膜器件，以确认其自旋注入效率，从而为第二阶段广泛的实际器件应用铺平道路。在薄膜器件设置中发现和确认有效的自旋注入材料是自旋电子半导体工业的关键，其对美国经济和环境的潜在效益是巨大的。它将掀起自旋半导体器件的产业，从传感器到自旋电流放大晶体管。一旦实现，自旋电子器件的容量和速度将是传统半导体器件的四倍。这最终将导致创造出以四种不同自旋状态（向上、向下或两者的两种混合）编码信息的量子计算机，而不是像目前那样用二进制数字表示数据。最终将形成市场规模超过目前半导体产业的自旋电子学产业。

0340438This Small Business Innovation Research Phase I project will address the high efficiency spininjection materials. One of the major technical barriers to realize the practicalimplementation of spin-controlled devices is the development of spin injection contactmaterials that will effectively inject spin polarized electrons into semiconductors. Oneapproach is the development of room temperature, soft ferromagnetic semiconductors. Basedon Intematix's proprietary combinatorial technology of materials research, transition metaldoped In2O3, well-known wide bandgap semiconductor, was found to have impurity-free,room temperature ferromagnetism with high solubility of dopants. With many emerging newdiluted magnetic semiconductor materials troubled by magnetic impurities, the impurity-freemagnetism in doped In2O3 raises a significant possibility of spin polarization in this widebandgap semiconductor. The goal is to realize a thin film device to confirm its spin injection efficiency, thus paving the way for a wide range of practical device applications in Phase II.The discovery and confirmation of efficient spin injection materials in thin film device setting is the key to the spintronics semiconductor industry, and its potential benefits to the U.S. economy and environment is enormous. It will set off the industry of spin-enabled semiconductor devices from sensors to spin-current amplifying transistors. Once realized, the spintronic devices will quadruple the capacity and speed of conventional semiconductor devices. This will eventually lead to create quantum computers that encode information in four different spin states -- up, down or two mixtures of both -- instead of representing data in binary digits, as is the case at present. Eventually it will create the spintronics industry whose market is projected to be bigger than the current semiconductor industry.