Electric Field Effect in Layered Inorganic and Organic Semiconductors

层状无机和有机半导体中的电场效应

基本信息

  • 批准号:
    0405208
  • 负责人:
  • 金额:
    $ 39万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2004
  • 资助国家:
    美国
  • 起止时间:
    2004-04-01 至 2008-03-31
  • 项目状态:
    已结题

项目摘要

This condensed matter physics project will explore charge transport on the surface of organic and inorganic layered semiconductors. The objective is to develop novel techniques for fabrication of field-effect structures based on single crystals of these materials. The focus is on exploration of the intrinsic (not limited by the structural disorder) electronic properties, effects of the molecular packing on the magnitude and anisotropy of the charge carrier mobility, the mechanism of persistent photoconductivity in organic semiconductors, and realization of light emission in the ambipolar field-effect transistors based on transition metal dichalcogenides. The research will contribute to better understanding of the polaronic transport and electronic and optical properties of a wide range of organic and inorganic semiconductors. Of interest are the ultimate limits of the organic transistor performance and the search for novel materials with a higher mobility of charge carriers. Implementation of the proposed research fosters training of both undergraduate and graduate students: The students will enjoy broad exposure to the state-of-the-art tools of modern solid state and semiconductor research, and the cutting-edge physics research. The results of this research will be used in a new undergraduate course "Electronic Processes in Nanostructures", an essential part of the Rutgers efforts to develop a novel curriculum on nanoscience and nanotechnology.The goal of this project is to explore the charge transport on the surface of organic and inorganic layered semiconductors, the fundamental building blocks of the emerging field of "flexible" electronics. The project takes advantage of the novel techniques for fabrication of the single crystal field-effect transistors, developed at Rutgers University under prior NSF support. The focus is on exploration of the intrinsic (not limited by the structural defects) electronic properties, the effects of molecular packing on the magnitude and anisotropy of the charge carrier mobility, the mechanism of persistent photoconductivity in organic semiconductors, and realization of light emission in the field-effect devices based on layered inorganic semiconductors. The research will contribute to better understanding of electronic and optical properties of a wide range of organic and inorganic semiconductors. It will elucidate the ultimate limits of the organic transistor performance and facilitate the search for novel materials with a higher mobility of charge carriers. Implementation of the proposed research fosters training of both undergraduate and graduate students. The students are exposed to the state-of-the-art tools of modern solid state and semiconductor research, and can pursue careers in either academic or industrial environment. The results of this research will be used in a new undergraduate course "Electronic Processes in Nanostructures", an essential part of the Rutgers efforts to develop a novel curriculum on nanoscience and nanotechnology.
这个凝聚态物理项目将探索有机和无机层状半导体表面的电荷输运。目的是开发基于这些材料单晶的场效应结构制造的新技术。重点是探索本征(不受结构无序的限制)电子特性,分子填充对载流子迁移率大小和各向异性的影响,有机半导体中持续光电导率的机制,以及基于过渡金属二硫族化合物的双极性场效应晶体管的发光实现。该研究将有助于更好地理解各种有机和无机半导体的极化输运以及电子和光学性质。感兴趣的是有机晶体管性能的极限和寻找具有更高载流子迁移率的新材料。实施拟议的研究促进了对本科生和研究生的培训:学生将广泛接触现代固态和半导体研究的最先进工具,以及前沿物理研究。这项研究的结果将用于一门新的本科课程“纳米结构中的电子过程”,这是罗格斯大学开发纳米科学和纳米技术新课程的重要组成部分。这个项目的目标是探索有机和无机层状半导体表面的电荷传输,这是新兴的“柔性”电子领域的基本组成部分。该项目利用了制造单晶场效应晶体管的新技术,该技术是在美国国家科学基金会的支持下由罗格斯大学开发的。重点是探索本征(不受结构缺陷的限制)电子特性,分子填充对载流子迁移率大小和各向异性的影响,有机半导体中持续光电导率的机制,以及基于层状无机半导体的场效应器件中光发射的实现。该研究将有助于更好地理解各种有机和无机半导体的电子和光学特性。它将阐明有机晶体管性能的极限,并促进寻找具有更高载流子迁移率的新材料。拟议研究的实施促进了本科生和研究生的培训。学生将接触到现代固态和半导体研究的最先进的工具,并可以在学术或工业环境中从事职业。这项研究的结果将用于一门新的本科课程“纳米结构中的电子过程”,这是罗格斯大学开发纳米科学和纳米技术新课程的重要组成部分。

项目成果

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Michael Gershenson其他文献

Probing spin susceptibility of a correlated two-dimensional electron system by transport and magnetization measurements
通过传输和磁化测量探测相关二维电子系统的自旋磁化率
  • DOI:
    10.1103/physrevb.98.155109
  • 发表时间:
    2018
  • 期刊:
  • 影响因子:
    3.7
  • 作者:
    V. Pudalov;A. Kuntsevich;Michael Gershenson;I. S. Burmistrov;M. Reznikov
  • 通讯作者:
    M. Reznikov
Experimental Evidence for an Inhomogeneous State of the Correlated Two-Dimensional Electron System in the Vicinity of a Metal–Insulator Transition
金属-绝缘体跃迁附近相关二维电子系统非均匀态的实验证据
  • DOI:
    10.1134/s0021364020040116
  • 发表时间:
    2020
  • 期刊:
  • 影响因子:
    1.3
  • 作者:
    V. Pudalov;Michael Gershenson
  • 通讯作者:
    Michael Gershenson
Spectroscopic Evidence of the Aharonov-Casher Effect in a Cooper Pair Box.
库珀对盒中阿哈罗诺夫-卡舍尔效应的光谱证据。
  • DOI:
    10.1103/physrevlett.116.107002
  • 发表时间:
    2015
  • 期刊:
  • 影响因子:
    8.6
  • 作者:
    Matthew Bell;Matthew Bell;Wenyuan Zhang;Lev Ioffe;Lev Ioffe;Michael Gershenson
  • 通讯作者:
    Michael Gershenson

Michael Gershenson的其他文献

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{{ truncateString('Michael Gershenson', 18)}}的其他基金

Quantum Phase Transitions And Many-Body Localization In Unconventional 1D Josephson Arrays
非常规一维约瑟夫森阵列中的量子相变和多体局域化
  • 批准号:
    1708954
  • 财政年份:
    2017
  • 资助金额:
    $ 39万
  • 项目类别:
    Standard Grant
Quantum Phase Transitions in Unconventional Josephson Arrays
非常规约瑟夫森阵列中的量子相变
  • 批准号:
    1006265
  • 财政年份:
    2010
  • 资助金额:
    $ 39万
  • 项目类别:
    Continuing Grant
NIRT: Design and Realization of Decoherence-Free Nanoscale Superconducting Qubits
NIRT:无退相干纳米级超导量子位的设计与实现
  • 批准号:
    0608842
  • 财政年份:
    2006
  • 资助金额:
    $ 39万
  • 项目类别:
    Standard Grant
NER: Experimental Realization of Protected Qubits
NER:受保护量子位的实验实现
  • 批准号:
    0508129
  • 财政年份:
    2005
  • 资助金额:
    $ 39万
  • 项目类别:
    Standard Grant
ORGANICS: Elastomeric Stamps for Fabrication of Organic Transistors and Probing Fundamental Limits of their Performance
有机:用于制造有机晶体管的弹性体印章及其性能的基本极限
  • 批准号:
    0437932
  • 财政年份:
    2005
  • 资助金额:
    $ 39万
  • 项目类别:
    Continuing Grant
Anomalous Metal in Two Dimensions
二维异常金属
  • 批准号:
    0077825
  • 财政年份:
    2000
  • 资助金额:
    $ 39万
  • 项目类别:
    Continuing Grant

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