In Situ Probing of Atomic Layer Deposition: Surface Chemistry, Film Growth and Electrical Properties

这一研究项目由分析和表面化学计划支持，涉及SiO2和SnO2层的原子层沉积化学的基本方面。 科罗拉多大学的乔治教授和他的合作者使用一种新型的粘流反应器，结合多个表面分析探针，正在研究这些重要过程的详细机制。红外光谱、电学测量、石英晶体微重分析和气相反应物和产物分析的组合为确定表面反应动力学和机理提供了有效的工具。 这项工作的结果将在电子材料加工和新的气体传感器系统的开发中得到应用。 使用表面光谱探针的组合，乔治教授和他的同事正在研究原子层沉积（ALD）的详细机械化学。 这项工作主要集中在使用ALD的半导体和金属氧化物层的沉积。 这项工作的结果被应用到半导体工艺化学的设计，和气体传感器器件的制造。

AbstractCHE-0408554George/ColoradoThis research project, supported by the Analytical and Surface Chemistry Program, addresses the fundamental aspects of atomic layer deposition chemistry of SiO2 and SnO2 layers. Using a novel viscous flow reactor coupled with multiple surface analysis probes, Professor George and his collaborators at the University of Colorado, are investigating the detailed mechanisms of these important processes. The combination of infrared spectroscopy, electrical measurements, quartz crystal microgravimetry, and gas phase reactant and product analysis provides an effective tool for determining surface reaction kinetics and mechanisms. Results of this work will find application in electronic materials processing and in the development of new gas sensor systems. Using a combination of surface spectroscopic probes, Professor George and his coworkers are examining the detailed mechanistic chemistry of atomic layer deposition (ALD). This work concentrates primarily on the deposition of semiconductor and metal oxide layers using ALD. The results of this work are applied to the design of semiconductor process chemistry, and to the fabrication of gas sensor devices.