SBIR Phase II: Non-Contact/Zero-Stress Surface Polishing Process for Copper/Low Dielectric Constant Semiconductors

SBIR 第二阶段：铜/低介电常数半导体的非接触/零应力表面抛光工艺

• 批准号: 0421638
• 负责人: Heather McCrabb
• 金额: --
• 依托单位: FARADAY TECHNOLOGY, INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-11-01 至 2007-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0421638&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Non; Contact

This Small Business Innovation Research (SBIR) Phase II project will advance the development of a non-contact electro-polish process, addressing the need for a non-contact/stress-free polishing method for planarization of Cu/low-k interconnects required for the fabrication of nanochip integrated circuits. This technology utilizes pulsed electrolysis and a moving electrolyte front to effect complete electrochemical removal of copper overplate from a semiconductor wafer. The Phase II objectives/research tasks include: 1) design and fabrication of a module for the non-contact electro-polish process, 2) demonstration and optimization of the process on full size wafers, 3) development of a theoretical model defining a process library for the non-contact electro-polish process, and 4) characterization of the polishing performance and relationship to the mechanical properties of the materials used. Commercially, the anticipated results of the program are a marketable manufacturing process/manufacturing tool in the form of an electrochemical module incorporating the non-contact electro-polish process. This product/process technology is enabling to other emerging industries such as MEMS and/or NEMS. In general, the project addresses the needs of the semiconductor industry, which is an important aspect of the US commercial economy and will play an increasing role in the US as well as world society. Furthermore, the process minimizes chemical waste and environmental impact.

该小型企业创新研究（SBIR）第二阶段项目将推进非接触式电抛光工艺的开发，解决纳米芯片集成电路制造所需的铜/低k互连平面化的非接触/无应力抛光方法的需求。 该技术利用脉冲电解和移动的电解质前沿来实现从半导体晶片上完全电化学去除铜镀层。 第二阶段的目标/研究任务包括：1）设计和制造非接触式电抛光工艺模块，2）在全尺寸晶片上演示和优化工艺，3）开发定义非接触式电抛光工艺工艺库的理论模型，以及4）表征抛光性能和与所用材料机械性能的关系。在商业上，该计划的预期结果是一种可销售的制造工艺/制造工具，其形式为包含非接触式电抛光工艺的电化学模块。 该产品/工艺技术正在为其他新兴行业（如MEMS和/或NEMS）提供支持。 总的来说，该项目解决了半导体行业的需求，这是美国商业经济的一个重要方面，并将在美国和世界社会中发挥越来越大的作用。 此外，该工艺最大限度地减少了化学废物和环境影响。