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SBIR Phase II: Diode-Pumped, High-Power, Cr:LiSAF-Based Ultrafast Laser and THz Source

SBIR Phase II: Diode-Pumped, High-Power, Cr:LiSAF-Based Ultrafast Laser and THz Source
SBIR 第二阶段:二极管泵浦、高功率、基于 Cr:LiSAF 的超快激光器和太赫兹源
批准号:
0422089
负责人:
Evgueni Slobodtchikov
金额:
$0.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-08-01 至 2007-07-31
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中文摘要
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英文摘要
This Small Business Innovation Research (SBIR) Phase II will develop the ultrafast laser system that could represent a significant advance in the technology of directly diode-pumped, solid state, ultrafast sources. In the initial Phase I effort, a record cw power level ( 2W) from diode-pumped Lasers were demonstrated through the use of an innovative, side-pumped design. In Phase II, this design will be further improved and utilized as the basis for a regenerative amplifier to generate high peak powers. The output of a passively mode-locked, diode-pumped laser should provide the seed pulses for the regenerative amplifier. The overall ultrafast source should be simpler, smaller and ultimately less expensive than present, power-equivalent, sapphire-based ultrafast laser systems. As a demonstration of the utility of the proposed technology, a time-domain terahertz (THz) spectrometer will be constructed, based on an optical-rectification THz source and an electro-optical detector, both driven by the laser system. The directly diode-pumped ultrafast laser represents an enabling technology, allowing ultrafast and THz systems to emerge from the laboratory and into the widespread scientific and industrial applications The proposed ultrafast laser and THz spectrometer both could have the potential for significant scientific and commercial impact. With the lower cost (on the order of 50%) made possible by the simplicity of design, a wider range of research groups in academia and industry will be able to obtain ultrafast sources and THz instrumentation. The lower cost, simplicity, higher reliability and smaller size of the systems will also greatly expand and accelerate the use of ultrafast lasers and THz radiation in biotechnology, medical imaging, precision micro-machining, industrial process control and security systems.
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SBIR Phase I: Diode-Pumped, High-Power, Cr:LiSAF-Based Ultrafast Laser and THz Source
  • 批准号:
    0319828
  • 项目类别:
    Standard Grant
  • 资助金额:
    $10.0万
  • 财政年份:
    2003
  • 负责人:
    Evgueni Slobodtchikov
  • 依托单位:
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