SBIR Phase I: Diode-Pumped, High-Power, Cr:LiSAF-Based Ultrafast Laser and THz Source

SBIR 第一阶段：二极管泵浦、高功率、基于 Cr:LiSAF 的超快激光器和太赫兹源

• 批准号: 0319828
• 负责人: Evgueni Slobodtchikov
• 金额: $ 10万
• 依托单位: Q-PEAK, INC.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-07-01 至 2003-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0319828&HistoricalAwards=false
• 关键词: SBIR; Phase; Diode; Pumped; Power

This Small Business Innovation Research Phase I project aims to conduct key experiments directed toward the development of an innovative, ultrafast-pulse laser source. While Ti: sapphire-based femtosecond sources are widely deployed in scientific laboratories throughout the world, they have a level of complexity and cost that is a barrier to wider use of femtosecond systems. Based on a directly diode-pumped Cr:LiSAF laser and following a multi-pass slab design that has proven successful with similar materials, the source to be developed in this project will be less complex, smaller and less expensive than present ultrafast laser systems. One application that will be emphasized in the project is terahertz generation, which in turn has a variety of significant uses. In the Phase I program, Cr:LiSAF lasers will be built and characterize, with two possible diode-pumping geometries. In addition, a Q-switched laser based on one of the Cr:LiSAF designs will be built and characterized to provide data on the potential performance of a regenerative amplifier based on the proposed technology. Finally a preliminary design will be conducted of a high-power, diode-pumped, Cr:LiSAF-based THz-radiation system. If the overall effort is successful, the outcome will be ultrafast- and terahertz-generation products suited for scientific and industrial customers. The initial market for the ultrafast laser would be the scientific research community, but it is anticipated that industrial applications such as process-control spectroscopy, ultra-precise micro-machining, biological imaging and high-speed electronics circuit testing, would also accept this technology. The development of the associated THz source would provide the option of supplying devices to address the emerging applications of THz systems. These applications include, but are not limited to, communications, atmospheric sensing, collision avoidance, medical imaging, non-destructive inspection and security scanning.

这个小型企业创新研究第一阶段项目旨在进行关键实验，旨在开发创新的超快脉冲激光源。而Ti：基于半导体的飞秒源被广泛部署在世界各地的科学实验室中，它们具有一定程度的复杂性和成本，这是飞秒系统更广泛使用的障碍。基于直接二极管泵浦的Cr：LiSAF激光器，并遵循已被证明成功使用类似材料的多程板条设计，该项目中开发的源将比目前的超快激光系统更简单，更小，更便宜。 该项目将强调的一个应用是太赫兹产生，这反过来又有各种重要用途。在第一阶段计划中，Cr：LiSAF激光器将采用两种可能的二极管泵浦几何结构进行构建和表征。此外，Q开关激光器的基础上的Cr：LiSAF的设计之一，将建立和特点，提供数据的再生放大器的潜在性能的基础上提出的技术。最后，对一个高功率、二极管泵浦的Cr：LiSAF基太赫兹辐射系统进行了初步设计。如果整体努力取得成功，其结果将是适合科学和工业客户的超快和太赫兹一代产品。 超快激光器的最初市场将是科学研究界，但预计过程控制光谱学、超精密微加工、生物成像和高速电子电路测试等工业应用也将接受这项技术。 相关太赫兹源的开发将提供提供设备的选择，以解决太赫兹系统的新兴应用。这些应用包括但不限于通信、大气传感、防撞、医学成像、无损检测和安全扫描。