CAREER: Thermal Engineering of Nitride Semiconductor Devices
职业:氮化物半导体器件的热工程
基本信息
- 批准号:0448795
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2005
- 资助国家:美国
- 起止时间:2005-07-01 至 2011-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
CAREER: Thermal Engineering Of Nitride Semiconductor DevicesThe development of gallium nitride (GaN) as a semiconductor material has been heralded for its potential use in optoelectronic and power semiconductor applications. GaN semiconductors are poised to make large contributions to the advancement of RF-communications systems as well as solid state lighting. A potential saving $40 billion per year in energy consumed by lighting is expected by 2025. While early laboratory demonstrations have clearly shown the potential revolutionary effects of GaN semiconductors, reliability issues arise from localized heating and poor heat dissipation in these devices. The Intellectual Merit of this research program is to provide fundamental knowledge of the thermal transport properties of GaN semiconductors and increase the accuracy of thermal transport models for devices. Models will be verified through measurements of temperature distribution in both solid state lighting and rf-communication devices fabricated in this program. The knowledge gained in this program will lead to more efficient thermal management schemes which will enable high power devices for future applications. This project will achieve Broad Impact by enhancing Georgia Tech's efforts to develop programs in microscale heat transfer and nitride semiconductor technology. The educational plan will develop of a graduate course on the thermal metrology and property characterization of nitride semiconductor devices. In addition, students will be exposed to a broad set of technical and cultural experiences through joint collaborations and technical exchanges. The outreach plan will be focused on the development of a six week course module in mechanical engineering for a Pre-engineering course in the magnet program at Westlake High School. This course module will be disseminated to a broader audience by Georgia Tech through the NSF Digital Library for Engineering (Teach Engineering: Resources for K-12).
职业:氮化物半导体器件的热工程氮化镓(GaN)作为半导体材料的发展已经预示着其在光电和功率半导体应用中的潜在用途。 GaN半导体有望为射频通信系统和固态照明的发展做出巨大贡献。 预计到2025年,照明消耗的能源每年可节省400亿美元。 虽然早期的实验室演示已经清楚地表明了GaN半导体的潜在革命性影响,但这些器件中的局部加热和散热不良会导致可靠性问题。 该研究计划的智力价值是提供GaN半导体热传输特性的基础知识,并提高器件热传输模型的准确性。 模型将通过测量固态照明和射频通信设备中的温度分布进行验证。 在该计划中获得的知识将导致更有效的热管理方案,这将使未来的应用高功率器件。 该项目将通过加强格鲁吉亚理工学院在微尺度传热和氮化物半导体技术方面的开发计划来实现广泛的影响。 该教育计划将开发一个关于氮化物半导体器件的热计量和性能表征的研究生课程。此外,学生将通过联合合作和技术交流接触到广泛的技术和文化经验。 推广计划将侧重于开发为期六周的机械工程课程模块,用于韦斯特莱克高中磁铁项目的工程预科课程。 本课程模块将通过美国国家科学基金会工程数字图书馆(教工程:K-12资源)传播给更广泛的受众。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Samuel Graham其他文献
金アミノ酸錯体 を前駆とした含浸法による担持金ナノ粒子触媒の調製における構造変化の解析
以金氨基酸配合物为前驱体浸渍法制备负载型金纳米粒子催化剂的结构变化分析
- DOI:
- 发表时间:
2015 - 期刊:
- 影响因子:0
- 作者:
Vladimir A Kolesov;Canek Fuentes-Hernandez;Wen-Fang Chou;Naoya Aizawa;Felipe A Larrain;Ming Wang;Alberto Perrotta;Sangmoo Choi;Samuel Graham;Guillermo C Bazan;Thuc-Quyen Nguyen;Seth R Marder;Bernard Kippelen;村山美乃・長谷 川貴之・山本裕典・石田玉青・刀禰美沙紀・本間徹生・大橋弘範・横山拓史・奥村光隆・徳永信 - 通讯作者:
村山美乃・長谷 川貴之・山本裕典・石田玉青・刀禰美沙紀・本間徹生・大橋弘範・横山拓史・奥村光隆・徳永信
The impact of device architecture on the thermal response of AlN/AlGaN digital alloy field-effect transistors
器件结构对氮化铝/氮化铝镓数字合金场效应晶体管热响应的影响
- DOI:
10.1016/j.applthermaleng.2025.126677 - 发表时间:
2025-10-01 - 期刊:
- 影响因子:6.900
- 作者:
Henry T. Aller;Thomas W. Pfeifer;Alexander Chaney;Kent Averett;Thaddeus Asel;Zachary Engel;Asif Khan;Patrick Hopkins;Alan Doolittle;Shin Mou;Samuel Graham - 通讯作者:
Samuel Graham
Demand Reduction and Energy Saving Potential of Thermal Energy Storage Integrated Heat Pumps
蓄热一体化热泵的需求减少和节能潜力
- DOI:
10.1016/j.ijrefrig.2023.01.026 - 发表时间:
2023 - 期刊:
- 影响因子:3.9
- 作者:
J. Hirschey;Zhenning Li;Kyle R. Gluesenkamp;T. Laclair;Samuel Graham - 通讯作者:
Samuel Graham
Development of New Faculty: Summary of the NSF-CMS WEE Workshop
新教师的发展:NSF-CMS WEE 研讨会总结
- DOI:
10.1061/(asce)1052-3928(2006)132:2(133 - 发表时间:
2006 - 期刊:
- 影响因子:0
- 作者:
C. Higgs;C. Higgs;C. Higgs;Samuel Graham;Samuel Graham;Samuel Graham;N. Mattei;N. Mattei;N. Mattei - 通讯作者:
N. Mattei
Effect of expanded graphite on the thermal conductivity of sodium sulfate decahydrate (Nasub2/subSOsub4/sub·10Hsub2/subO) phase change composites
膨胀石墨对十水硫酸钠(Na₂SO₄·10H₂O)相变复合材料热导率的影响
- DOI:
10.1016/j.est.2022.104949 - 发表时间:
2022-08-15 - 期刊:
- 影响因子:9.800
- 作者:
Jason Hirschey;Monojoy Goswami;Damilola O. Akamo;Navin Kumar;Yuzhan Li;Tim J. LaClair;Kyle R. Gluesenkamp;Samuel Graham - 通讯作者:
Samuel Graham
Samuel Graham的其他文献
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{{ truncateString('Samuel Graham', 18)}}的其他基金
Engineering for US All-E4USA: A National Pilot High School Engineering Course and Database
美国 All-E4USA 工程:国家试点高中工程课程和数据库
- 批准号:
2120746 - 财政年份:2021
- 资助金额:
-- - 项目类别:
Continuing Grant
Processing Mechanically Reliable Flexible Organic Electronic Films
加工机械可靠的柔性有机电子薄膜
- 批准号:
1400077 - 财政年份:2014
- 资助金额:
-- - 项目类别:
Standard Grant
High Throughput Process Screening and in-situ Characterization for Graphene Synthesis
石墨烯合成的高通量工艺筛选和原位表征
- 批准号:
0927736 - 财政年份:2009
- 资助金额:
-- - 项目类别:
Standard Grant
SGER: Development of Thin Film Encapsulation Layers For Organic Electronics
SGER:有机电子薄膜封装层的开发
- 批准号:
0835484 - 财政年份:2008
- 资助金额:
-- - 项目类别:
Standard Grant
SGER: Analysis of the Thermophysical Properties of MEMS Materials
SGER:MEMS 材料的热物理性质分析
- 批准号:
0413104 - 财政年份:2004
- 资助金额:
-- - 项目类别:
Standard Grant
相似国自然基金
Thermal-lag自由活塞斯特林发动机启动与可持续运行机理研究
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