SGER: Development of Thin Film Encapsulation Layers For Organic Electronics
SGER:有机电子薄膜封装层的开发
基本信息
- 批准号:0835484
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2008
- 资助国家:美国
- 起止时间:2008-08-01 至 2010-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This Small Grant for Exploratory Research (SGER) proposal aims to elucidate the impact of processing parameters on the performance of thin-film encapsulation layers used in organic electronics, leading to new architectures with improved performance. These films act as permeation barriers to prevent the exposure of organic electronics to atmospheric water vapor and oxygen which are detrimental to their performance. Vacuum deposition of thin-film barriers will be performed using plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), and combinations of the two techniques. Recent results have shown that unique combinations of ALD and PECVD processing may yield ultrahigh barrier films with submicron thickness and improved processing speeds. In this work, we will explore the impact of processing temperature, plasma power and frequency, and cycle times on the deposition of these thin film encapsulation layers. By varying these parameters, it will be possible to control both barrier and mechanical properties of the encapsulation films. Diffusion coefficients of the films will be determined using quartz crystal microbalance testing while water vapor transmission rates through the films will be determined using Ca corrosion testing. Mechanical properties will be investigated using flexure testing, nanoindentation, and atomic force microscopy. Microstructural analysis will be performed using high resolution SEM and FIB microscopy.If successful, this exploratory grant will yield a new architecture for encapsulating organic electronics which is thinner and more mechanically robust than state of the art encapsulation films. An understanding of the role of processing parameters on thin film properties will provide a framework for optimizing the encapsulation films of other compositions. Moreover, the combined PECVD/ALD method will be tuned to provide ultrahigh barrier performance with improvements in deposition rates which is necessary for future implementation in mass manufacturing of flexible organic electronics.
这项用于探索研究的小额拨款(SGER)计划旨在阐明工艺参数对用于有机电子的薄膜封装层性能的影响,从而导致性能得到改善的新架构。这些薄膜起到渗透屏障的作用,防止有机电子暴露在大气中的水蒸气和氧气中,这对它们的性能是有害的。薄膜屏障的真空沉积将使用等离子体增强化学气相沉积(PECVD)、原子层沉积(ALD)以及这两种技术的组合。最近的结果表明,ALD和PECVD工艺的独特组合可能会产生亚微米厚度的超高势垒薄膜和更高的处理速度。在这项工作中,我们将探索加工温度、等离子体功率和频率以及循环次数对这些薄膜封装层沉积的影响。通过改变这些参数,可以控制包封膜的阻隔性和机械性能。薄膜的扩散系数将通过石英晶体微天平测试来确定,而水蒸气通过薄膜的透过率将通过钙腐蚀测试来确定。力学性能将使用弯曲测试、纳米压痕和原子力显微镜进行研究。微结构分析将使用高分辨率扫描电子显微镜和FIB显微镜进行。如果成功,这项探索性拨款将产生一种新的封装有机电子产品的结构,它比最先进的封装薄膜更薄,机械更坚固。了解工艺参数对薄膜性能的影响将为优化其他组份的封装膜提供一个框架。此外,PECVD/ALD组合方法将进行调整,以提供超高的阻挡性能和更高的沉积速率,这是未来大规模制造柔性有机电子所必需的。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Samuel Graham其他文献
金アミノ酸錯体 を前駆とした含浸法による担持金ナノ粒子触媒の調製における構造変化の解析
以金氨基酸配合物为前驱体浸渍法制备负载型金纳米粒子催化剂的结构变化分析
- DOI:
- 发表时间:
2015 - 期刊:
- 影响因子:0
- 作者:
Vladimir A Kolesov;Canek Fuentes-Hernandez;Wen-Fang Chou;Naoya Aizawa;Felipe A Larrain;Ming Wang;Alberto Perrotta;Sangmoo Choi;Samuel Graham;Guillermo C Bazan;Thuc-Quyen Nguyen;Seth R Marder;Bernard Kippelen;村山美乃・長谷 川貴之・山本裕典・石田玉青・刀禰美沙紀・本間徹生・大橋弘範・横山拓史・奥村光隆・徳永信 - 通讯作者:
村山美乃・長谷 川貴之・山本裕典・石田玉青・刀禰美沙紀・本間徹生・大橋弘範・横山拓史・奥村光隆・徳永信
The impact of device architecture on the thermal response of AlN/AlGaN digital alloy field-effect transistors
器件结构对氮化铝/氮化铝镓数字合金场效应晶体管热响应的影响
- DOI:
10.1016/j.applthermaleng.2025.126677 - 发表时间:
2025-10-01 - 期刊:
- 影响因子:6.900
- 作者:
Henry T. Aller;Thomas W. Pfeifer;Alexander Chaney;Kent Averett;Thaddeus Asel;Zachary Engel;Asif Khan;Patrick Hopkins;Alan Doolittle;Shin Mou;Samuel Graham - 通讯作者:
Samuel Graham
Demand Reduction and Energy Saving Potential of Thermal Energy Storage Integrated Heat Pumps
蓄热一体化热泵的需求减少和节能潜力
- DOI:
10.1016/j.ijrefrig.2023.01.026 - 发表时间:
2023 - 期刊:
- 影响因子:3.9
- 作者:
J. Hirschey;Zhenning Li;Kyle R. Gluesenkamp;T. Laclair;Samuel Graham - 通讯作者:
Samuel Graham
Development of New Faculty: Summary of the NSF-CMS WEE Workshop
新教师的发展:NSF-CMS WEE 研讨会总结
- DOI:
10.1061/(asce)1052-3928(2006)132:2(133 - 发表时间:
2006 - 期刊:
- 影响因子:0
- 作者:
C. Higgs;C. Higgs;C. Higgs;Samuel Graham;Samuel Graham;Samuel Graham;N. Mattei;N. Mattei;N. Mattei - 通讯作者:
N. Mattei
Effect of expanded graphite on the thermal conductivity of sodium sulfate decahydrate (Nasub2/subSOsub4/sub·10Hsub2/subO) phase change composites
膨胀石墨对十水硫酸钠(Na₂SO₄·10H₂O)相变复合材料热导率的影响
- DOI:
10.1016/j.est.2022.104949 - 发表时间:
2022-08-15 - 期刊:
- 影响因子:9.800
- 作者:
Jason Hirschey;Monojoy Goswami;Damilola O. Akamo;Navin Kumar;Yuzhan Li;Tim J. LaClair;Kyle R. Gluesenkamp;Samuel Graham - 通讯作者:
Samuel Graham
Samuel Graham的其他文献
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{{ truncateString('Samuel Graham', 18)}}的其他基金
Engineering for US All-E4USA: A National Pilot High School Engineering Course and Database
美国 All-E4USA 工程:国家试点高中工程课程和数据库
- 批准号:
2120746 - 财政年份:2021
- 资助金额:
-- - 项目类别:
Continuing Grant
Processing Mechanically Reliable Flexible Organic Electronic Films
加工机械可靠的柔性有机电子薄膜
- 批准号:
1400077 - 财政年份:2014
- 资助金额:
-- - 项目类别:
Standard Grant
High Throughput Process Screening and in-situ Characterization for Graphene Synthesis
石墨烯合成的高通量工艺筛选和原位表征
- 批准号:
0927736 - 财政年份:2009
- 资助金额:
-- - 项目类别:
Standard Grant
CAREER: Thermal Engineering of Nitride Semiconductor Devices
职业:氮化物半导体器件的热工程
- 批准号:
0448795 - 财政年份:2005
- 资助金额:
-- - 项目类别:
Standard Grant
SGER: Analysis of the Thermophysical Properties of MEMS Materials
SGER:MEMS 材料的热物理性质分析
- 批准号:
0413104 - 财政年份:2004
- 资助金额:
-- - 项目类别:
Standard Grant
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