High Performance Optoelectronic Devices Using Silicon-Germanium-Carbon Alloys
使用硅-锗-碳合金的高性能光电器件
基本信息
- 批准号:0501515
- 负责人:
- 金额:$ 24万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2005
- 资助国家:美国
- 起止时间:2005-04-15 至 2008-03-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
0501515RanaIntellectual MeritsThe research proposed here aims to develop high performance optical devices, such as optical modulators, photodetectors, and waveguides, using Silicon-Germanium-Carbon (SiGeC) alloys that are compatible with Silicon microelectronics. Thick dislocation free SiGeC layers can be grown lattice matched to Silicon substrates. The use of SiGeC alloys allows one to realize compact and efficient optical devices. The performance of on-chip electro-optical modulators and photodetectors, measured in terms of modulation efficiency, detection efficiency, and bandwidth, can be enhanced many folds (between 5 to 10 times) by using devices that employ SiGeC alloys instead of SiGe alloys or plain Silicon. The proposed devices can be easily integrated with Silicon microelectronics, and are expected to contribute to the development of Silicon transmitter and receiver chips for short-haul optical communication systems, as well as to the development of high bandwidth intra-chip optical interconnections. Broader ImpactsSiGeC alloys can bring the material and design flexibility available in III-V material systems to the Silicon platform and enable a variety of novel devices based on SiGeC/Si multiple quantum wells strucures, such as quantum well infrared photodetectors (QWIPs) and mid-IR and far-IR SiGeC/Si quantum cascade lasers. The impact on education of the proposed research will be in the development of course curricula for the Electrical Engineering Department at Cornell University that will synthesize various perspectives of electrical engineering, semiconductor optoelectronics, nanotechnology, and device physics at the undergraduate and graduate levels. The proposed research provides a rich set of engineering research problems that will greatly benefit the education of the graduate students involved in the project. In addition, summer workshops for high school students, professional development workshops and courses for high school teachers, and lectures and demonstrations for middle school students will be organized.
0501515 Rana智力优点本研究旨在开发高性能的光学器件,如光调制器,光电探测器和波导,使用硅锗碳(SiGeC)合金,与硅微电子兼容。厚的无位错SiGeC层可以生长为与硅衬底晶格匹配。SiGeC合金的使用允许实现紧凑且高效的光学器件。通过使用采用SiGeC合金而不是SiGe合金或普通硅的器件,可以将片上电光调制器和光电探测器的性能(在调制效率、检测效率和带宽方面测量)提高许多倍(5至10倍之间)。所提出的器件可以很容易地与硅微电子集成,并预计将有助于短距离光通信系统的硅发射机和接收机芯片的发展,以及高带宽芯片内光互连的发展。更广泛的影响SiGeC合金可以将III-V族材料系统中可用的材料和设计灵活性带到硅平台,并使各种基于SiGeC/Si多量子威尔斯结构的新型器件成为可能,例如量子阱红外光电探测器(QWIP)以及中红外和远红外SiGeC/Si量子级联激光器。拟议的研究对教育的影响将是在康奈尔大学电气工程系的课程开发,将综合电子工程,半导体光电子,纳米技术和设备物理学在本科和研究生水平的各种观点。拟议的研究提供了一套丰富的工程研究问题,这将大大有利于参与该项目的研究生的教育。此外,还将为高中生举办暑期讲习班,为高中教师举办专业发展讲习班和课程,为中学生举办讲座和示范。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Farhan Rana其他文献
Prostate cancer, its implications and awareness in the South Asian population: a retrospective cross-sectional cohort analysis
前列腺癌、其对南亚人群的影响和认识:回顾性横断面队列分析
- DOI:
10.1097/gh9.0000000000000397 - 发表时间:
2024 - 期刊:
- 影响因子:0
- 作者:
Saad Shakil;S. E. Akhtar;Akhtar Ali;Priya Kotak;Muhammad A. Niaz;Farhan Rana;Mouhammad Halabi;Akashnath Kivalur Ganeshanath;Abdulla K. Alsubai;Abdulla Almesri;Hani Khayyat;Uzair Malik - 通讯作者:
Uzair Malik
Plasmons get tuned up
等离子激元得到了调整。
- DOI:
10.1038/nnano.2011.170 - 发表时间:
2011-10-07 - 期刊:
- 影响因子:34.900
- 作者:
Farhan Rana - 通讯作者:
Farhan Rana
Passively Mode-Locked High-Power (210 mW) Semiconductor Lasers at 1.55-$mu$m Wavelength
波长为 1.55-$mu$m 的被动锁模高功率 (210 mW) 半导体激光器
- DOI:
- 发表时间:
2008 - 期刊:
- 影响因子:2.6
- 作者:
Faisal R. Ahmad;Farhan Rana - 通讯作者:
Farhan Rana
Measurement of the optical properties of graphene from THz to near-IR
测量石墨烯从太赫兹到近红外的光学特性
- DOI:
- 发表时间:
2008 - 期刊:
- 影响因子:0
- 作者:
J. Dawlaty;P. George;J. Strait;S. Shivaraman;Mvs Chandrashekhar;Farhan Rana;Michael G. Spencer - 通讯作者:
Michael G. Spencer
Farhan Rana的其他文献
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{{ truncateString('Farhan Rana', 18)}}的其他基金
Antiferromagnetic Spin Torque Devices for Terahertz Applications
用于太赫兹应用的反铁磁自旋扭矩装置
- 批准号:
1029796 - 财政年份:2010
- 资助金额:
$ 24万 - 项目类别:
Standard Grant
Graphene Terahertz Plasmon Oscillators
石墨烯太赫兹等离子体振荡器
- 批准号:
0824209 - 财政年份:2008
- 资助金额:
$ 24万 - 项目类别:
Standard Grant
TCHCS: Ultra-High Modulation Efficiency Semiconductor Lasers for RF(Wireless)-Optical(Fiber/Free-Space) Hybrid Links
TCHCS:用于射频(无线)-光学(光纤/自由空间)混合链路的超高调制效率半导体激光器
- 批准号:
0636593 - 财政年份:2006
- 资助金额:
$ 24万 - 项目类别:
Standard Grant
CAREER: Semiconductor Lasers for Generating High Energy Ultrashort (sub-50 fs) Optical Pulses: From Nanotechnology to Ultrafast Optics
职业:用于产生高能超短(亚 50 fs)光脉冲的半导体激光器:从纳米技术到超快光学
- 批准号:
0348501 - 财政年份:2004
- 资助金额:
$ 24万 - 项目类别:
Standard Grant
Optical: Ultrafast all-optical switches, modulators, and wavelength converters based on intersubband transitions for Tb/s operation
光学:基于 Tb/s 操作的子带间转换的超快全光开关、调制器和波长转换器
- 批准号:
0334986 - 财政年份:2003
- 资助金额:
$ 24万 - 项目类别:
Standard Grant
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