Optical: Ultrafast all-optical switches, modulators, and wavelength converters based on intersubband transitions for Tb/s operation

当数据速率超过100gb /s时，希望完全在光域中进行脉冲处理功能。本文提出的研究旨在开发超快全光开关，调制器，波长转换器以及全光脉冲重定时，重塑和再放大（3R生成）的器件，能够通过利用半导体量子阱中的子带间跃迁以接近1tb /s的速度执行。半导体量子阱中电子的子带间弛豫时间约为1ps，如此短的弛豫时间使得超快光学器件的实现成为可能。本文提出的研究将开发使用GaN/AlGaN/AlN多量子阱工作在1.55 mm的全光信号处理设备。这里提出的器件提供了接近1 Tb/s的开关速度的潜力，并且需要低至100 fJ的脉冲能量。将探讨子带间可饱和吸收器中通过交叉损耗调制（XLM）实现的全光开关、调制和波长转换，以及子带间光放大器中通过差分交叉相位调制（XPM）产生的全光3R。提议的研究涵盖了器件设计、材料生长、器件制造和器件表征的所有方面。本研究中提出的器件的成功演示将为工作在1.55 mm的超快光电器件创建一个新的技术平台。该研究将有助于其他工作在1.55 mm的超快子带间光电器件的发展，如激光器、探测器、电吸收调制器和用于模型锁定激光器的快速饱和吸收器。参与该项目的研究生和本科生将接受尖端光电子学培训。此外，这项工作的更广泛的影响将是课程课程的发展，将在本科和研究生阶段综合电子工程、量子工程、光学和固态物理的各种观点。

0334986RanaAt data rates exceeding 100 Gb/s it is desirable to perform pulse processing functions entirely in the optical domain. The research proposed here aims to develop ultrafast all-optical switches, modulators, wavelength converters, and devices for all-optical pulse retiming, reshaping, and reamplification (3R generation) capable of performing at speeds close to 1 Tb/s by using intersubband transitions in semiconductor quantum wells. Intersubband relaxation times of electrons in semiconductor quantum wells are around 1 ps. Such short relaxation times allow for the realization of ultrafast optical devices. The research proposed here will develop devices for all-optical signal processing operating at 1.55 mm using GaN/AlGaN/AlN multiple quantum wells. The devices proposed here offer the potential of switching speeds close to 1 Tb/s and require pulse energies as low as 100 fJ. All-optical switching, modulation, and wavelength conversion by cross-loss modulation (XLM) in intersubband saturable absorbers, and all-optical 3R generation by differential cross-phase modulation (XPM) in intersubband optical amplifiers will be explored. The proposed research covers all aspects of device design, material growth, device fabrication, and device characterization. A successful demonstration of the devices proposed in this research will create a new technology platform for ultrafast optoelectronic devices operating at 1.55 mm. The proposed research will contribute to the development of other ultrafast intersubband optoelectronic devices operating at 1.55 mm, such as lasers, detectors, electro-absorption modulators, and fast saturable absorbers for modelocked lasers. Graduate and undergraduate students involved in this project will get training in cutting edge optoelectronics. In addition, the broader impact of this work will be in the development of course curricula that will synthesize various perspectives of electrical engineering, quantum engineering, optics, and solid state physics at the undergraduate and graduate levels.