Optical: Ultrafast all-optical switches, modulators, and wavelength converters based on intersubband transitions for Tb/s operation

在超过100 Gb/s的数据速率下，希望完全在光域中执行脉冲处理功能。这里提出的研究的目的是开发超快全光开关，调制器，波长转换器，和设备的全光脉冲重定时，整形和再放大（3R代）能够执行的速度接近1 Tb/s，通过使用子带间跃迁在半导体量子威尔斯。半导体量子威尔斯中电子的子带间弛豫时间约为1 ps。这种短的弛豫时间允许实现超快光学器件。本文提出的研究将使用GaN/AlGaN/AlN多量子威尔斯阱开发在1.55 mm处工作的全光信号处理器件。这里提出的设备提供接近1 Tb/s的开关速度的潜力，并需要低至100 fJ的脉冲能量。将探讨在子带间可饱和吸收体中通过交叉损耗调制（XLM）实现的全光开关、调制和波长转换，以及在子带间光放大器中通过差分交叉相位调制（XPM）实现的全光3R产生。拟议的研究涵盖了器件设计，材料生长，器件制造和器件表征的各个方面。在这项研究中提出的设备的成功演示将创建一个新的技术平台，在1.55毫米的超快光电器件。拟议的研究将有助于其他超快子带间的光电器件在1.55毫米，如激光器，探测器，电吸收调制器，锁模激光器和快速饱和吸收器的发展。参与该项目的研究生和本科生将获得尖端光电子学的培训。此外，这项工作的更广泛的影响将是在课程的发展，将综合电子工程，量子工程，光学和固态物理在本科和研究生阶段的各种观点。

0334986RanaAt data rates exceeding 100 Gb/s it is desirable to perform pulse processing functions entirely in the optical domain. The research proposed here aims to develop ultrafast all-optical switches, modulators, wavelength converters, and devices for all-optical pulse retiming, reshaping, and reamplification (3R generation) capable of performing at speeds close to 1 Tb/s by using intersubband transitions in semiconductor quantum wells. Intersubband relaxation times of electrons in semiconductor quantum wells are around 1 ps. Such short relaxation times allow for the realization of ultrafast optical devices. The research proposed here will develop devices for all-optical signal processing operating at 1.55 mm using GaN/AlGaN/AlN multiple quantum wells. The devices proposed here offer the potential of switching speeds close to 1 Tb/s and require pulse energies as low as 100 fJ. All-optical switching, modulation, and wavelength conversion by cross-loss modulation (XLM) in intersubband saturable absorbers, and all-optical 3R generation by differential cross-phase modulation (XPM) in intersubband optical amplifiers will be explored. The proposed research covers all aspects of device design, material growth, device fabrication, and device characterization. A successful demonstration of the devices proposed in this research will create a new technology platform for ultrafast optoelectronic devices operating at 1.55 mm. The proposed research will contribute to the development of other ultrafast intersubband optoelectronic devices operating at 1.55 mm, such as lasers, detectors, electro-absorption modulators, and fast saturable absorbers for modelocked lasers. Graduate and undergraduate students involved in this project will get training in cutting edge optoelectronics. In addition, the broader impact of this work will be in the development of course curricula that will synthesize various perspectives of electrical engineering, quantum engineering, optics, and solid state physics at the undergraduate and graduate levels.