SBIR Phase I: Advanced Silicon-based Photodetectors Using Light Localization and Channeling

SBIR 第一阶段：使用光定位和通道的先进硅基光电探测器

• 批准号: 0539541
• 负责人: Pavan Keshavareddy
• 金额: --
• 依托单位: Phoebus Optoelectronics LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-01-01 至 2006-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0539541&HistoricalAwards=false
• 关键词: SBIR; Phase; Advanced; Silicon; based

This Small Business Innovation Research (SBIR) Phase I project will study the feasibility and analysis of the scientific and technical merit of using combinations of optical modes and surface plasmons (denoted collectively as electromagnetic resonance modes (ER)) to dramatically enhance the performance of photodetectors fabricated on silicon and silicon-on-insulator (SOI) substrates for a variety of applications. Silicon is a very desirable material to fabricate photodetectors on because it is inexpensive and because any readout integrated circuitry can be fabricated alongside the photodetector. Past efforts to develop high bandwidth/high responsivity Si-based photodetectors have been limited by the low light absorption constant of Si. This has led to detectors that have a gain-bandwidth product that is small compared with photodetectors fabricated using direct bandgap materials. Recent theoretical work on combinations of optical modes and surface plasmon modes (i.e., hybrid modes) has clearly demonstrated that combinations of these modes show great promise in enhancing device performance and functionality. The objective of the proposed project is the development of three types of hybrid mode-enhanced Si-based photodetectors for a variety of applications in mature and emerging areas of technology. These devices include hybrid mode enhanced bulk Si metal-semiconductor metal photodetector (MSM-PD), SOI MSM-PD and a Si APD. Successful development of silicon and silicon-on-insulator photodetectors will allow for far greater optoelectronic integration than what is possible now, allowing for the development of practical hybrid systems that integrate photonic and electronic components and in turn reduce costs, increase reliability, reduce size and weight and increase functionality. Applications will be developed including: ER-enhanced hybrid Si and SOI based photodetectors for 850nm wireless communication systems and very short range (VSR) fiber-based communication systems, and ER-enhanced APD detectors with less timing jitter, increased sensitivity and lower bias voltages for single photon detectors and LADAR applications. Besides the impressive market potential of the proposed devices they will also bring about new research areas into controlling light within devices. The techniques of light channeling and localization employed in this project will have far reaching effects on other areas of research and technology besides the applications stated above, such as biological and chemical sensors and devices for medical applications.

这个小型企业创新研究(SBIR)第一阶段项目将研究使用光学模式和表面等离子激元(统称为电磁共振模式(ER))的组合来显著提高在硅和绝缘体上硅(SOI)衬底上制造的用于各种应用的光电探测器的性能的可行性和科学技术优势分析。硅是一种非常理想的制造光电探测器的材料，因为它价格低廉，而且任何读出集成电路都可以与光电探测器一起制造。过去开发高带宽/高响应度的硅基光电探测器的努力一直受到硅的低光吸收常数的限制。这导致了与使用直接带隙材料制造的光电探测器相比，具有较小增益带宽乘积的探测器。最近关于光学模式和表面等离子激元模式(即混合模式)组合的理论工作已经清楚地表明，这些模式的组合在增强器件性能和功能方面显示出巨大的前景。拟议项目的目标是开发三种类型的混合模式增强型硅基光电探测器，用于成熟和新兴技术领域的各种应用。这些器件包括混合模式增强型体硅金属半导体金属光电探测器(MSM-PD)、SOI体硅金属半导体光电探测器(MSM-PD)和硅雪崩光电二极管。硅和绝缘体上硅光电探测器的成功开发将允许比现在更大的光电集成，从而允许开发集成光子和电子组件的实用混合系统，从而降低成本、提高可靠性、减轻尺寸和重量并增加功能。将开发的应用包括：用于850 nm无线通信系统和基于甚短距离(VSR)光纤通信系统的ER增强型混合硅和SOI光电探测器，以及用于单光子探测器和LADAR应用的具有更少定时抖动、更高灵敏度和更低偏置电压的ER增强型雪崩光电探测器。除了拟议中的设备令人印象深刻的市场潜力外，它们还将带来控制设备内光线的新研究领域。该项目中采用的光通道和定位技术将对除上述应用之外的其他研究和技术领域产生深远的影响，如生物和化学传感器和医疗应用装置。