Central facility for investigations of growth, structure, and electronic properties of graphene using low-energy electron microscopy (LEEM)

使用低能电子显微镜 (LEEM) 研究石墨烯生长、结构和电子特性的中央设施

• 批准号: 173773028
• 负责人: Professor Dr. Thomas Seyller
• 金额: --
• 依托单位: Professur für Experimentalphysik mit dem Schwerpunkt Technische Physik
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2010
• 资助国家: 德国
• 起止时间: 2009-12-31 至 2018-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/173773028?language=en
• 关键词: Central; facility; investigations; growth; structure

The development of graphene-based devices is dependent on the availability of high quality graphene layers. Several competing methods for the synthesis of graphene are investigated within the central project Graphene. Among them are the thermally activated growth on silicon carbide surfaces, chemical vapor deposition (CVD) on metal surfaces, thermal conversion of self-assembled monolayers, and molecular beam epitaxy (MBE). A prerequisite for success is a thorough characterization of structural and electronic properties of the resulting layers. Surface science techniques such as photoelectron spectroscopy (XPS, ARPES), low-energy electron diffraction (LEED), and scanning tunneling microscopy (STM) and spectroscopy (STS) are excellently suited for studying the properties of graphene on either large scale or atomic scale. Low-energy electron microscopy (LEEM) is a suitable method to study structural and electronic properties of graphene layers on length scales ranging from a few tens of micrometers down to a few tens of nanometers with a spatial resolution of 5 nm. LEEM is fast compared to STM and can also be used for in-situ studies of the growth of graphene. Recent work shows that LEEM is an indispensable method for the development of growth processes for graphene. A LEEM system was consequently installed during the first funding period of the SPP. Here we seek funds for a continuation of this project. In that project we will continue to investigate the growth and manipulation of graphene on SiC surfaces, and provide access to the LEEM setup to users from the SPP.In the field of graphene on SiC we will focus on the optimization of growth conditions for epitaxial graphene on Si-face SiC, on the analysis of dislocations in graphene, on the rotational disorder in multilayer graphene on C-face SiC, and on the growth of graphene on non-polar SiC surfaces. In addition we will study the growth of molecular overlayers on graphene on SiC which is an interesting tool for the precise control over the charge carrier type and density in graphene. We will provide access to the LEEM instrument and support to several groups. Together with U. Starke (MPI für Festkörperforschung) we will study the formation of graphene ribbons on patterned SiC surfaces. In collaboration with J. Wintterlin (LMU München) we will investigate the growth of graphene on metal substrates. The growth of graphene/h-BN heterostructures will be investigated together with C. Busse (Universität Köln) and we will collaborate with J. M. Lopes and A. Hernandez-Minguez (PDI Berlin) on the growth of graphene by MBE and by thermal decomposition of SiC. Finally, we will investigate the growth of graphene on diamond surfaces in collaboration with C. Nebel (Fraunhofer IAF, Freiburg).

石墨烯基器件的发展取决于高质量石墨烯层的可用性。在石墨烯中心项目中，研究了几种相互竞争的石墨烯合成方法。其中包括在碳化硅表面的热激活生长、金属表面的化学气相沉积（CVD）、自组装单层的热转化和分子束外延（MBE）。成功的先决条件是彻底表征所得到的层的结构和电子特性。表面科学技术，如光电子能谱（XPS， ARPES），低能电子衍射（LEED），扫描隧道显微镜（STM）和光谱学（STS）非常适合在大尺度或原子尺度上研究石墨烯的性质。低能电子显微镜（LEEM）是一种适合研究石墨烯层结构和电子特性的方法，其长度范围从几十微米到几十纳米，空间分辨率为5纳米。与STM相比，LEEM速度快，也可用于石墨烯生长的原位研究。最近的研究表明，LEEM是石墨烯生长过程发展不可或缺的方法。因此，在SPP的第一个资助期安装了LEEM系统。在这里，我们寻求资金来继续这个项目。在该项目中，我们将继续研究石墨烯在SiC表面上的生长和操作，并向spp的用户提供LEEM设置。在SiC上的石墨烯领域，我们将重点关注硅面SiC上外延石墨烯生长条件的优化，石墨烯中的位错分析，多层石墨烯在c面SiC上的旋转无序，以及石墨烯在非极性SiC表面上的生长。此外，我们将研究石墨烯在SiC上的分子覆盖层的生长，这是精确控制石墨烯中载流子类型和密度的有趣工具。我们将提供使用LEEM工具的机会，并为若干团体提供支持。与U. Starke （MPI f<e:1> r Festkörperforschung）一起，我们将研究石墨烯带在图案化SiC表面上的形成。与j.w intterlin （LMU m<e:1> nchen）合作，我们将研究石墨烯在金属衬底上的生长。石墨烯/h-BN异质结构的生长将与C. Busse （Universität Köln）一起研究，我们将与J. M. Lopes和A. Hernandez-Minguez （PDI Berlin）合作，通过MBE和SiC热分解来生长石墨烯。最后，我们将与C. Nebel （Fraunhofer IAF, Freiburg）合作研究石墨烯在金刚石表面的生长。