Central facility for investigations of growth, structure, and electronic properties of graphene using low-energy electron microscopy (LEEM)

使用低能电子显微镜 (LEEM) 研究石墨烯生长、结构和电子特性的中央设施

• 批准号: 173773028
• 负责人: Professor Dr. Thomas Seyller
• 金额: --
• 依托单位: Professur für Experimentalphysik mit dem Schwerpunkt Technische Physik
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2010
• 资助国家: 德国
• 起止时间: 2009-12-31 至 2018-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/173773028?language=en
• 关键词: Central; facility; investigations; growth; structure

The development of graphene-based devices is dependent on the availability of high quality graphene layers. Several competing methods for the synthesis of graphene are investigated within the central project Graphene. Among them are the thermally activated growth on silicon carbide surfaces, chemical vapor deposition (CVD) on metal surfaces, thermal conversion of self-assembled monolayers, and molecular beam epitaxy (MBE). A prerequisite for success is a thorough characterization of structural and electronic properties of the resulting layers. Surface science techniques such as photoelectron spectroscopy (XPS, ARPES), low-energy electron diffraction (LEED), and scanning tunneling microscopy (STM) and spectroscopy (STS) are excellently suited for studying the properties of graphene on either large scale or atomic scale. Low-energy electron microscopy (LEEM) is a suitable method to study structural and electronic properties of graphene layers on length scales ranging from a few tens of micrometers down to a few tens of nanometers with a spatial resolution of 5 nm. LEEM is fast compared to STM and can also be used for in-situ studies of the growth of graphene. Recent work shows that LEEM is an indispensable method for the development of growth processes for graphene. A LEEM system was consequently installed during the first funding period of the SPP. Here we seek funds for a continuation of this project. In that project we will continue to investigate the growth and manipulation of graphene on SiC surfaces, and provide access to the LEEM setup to users from the SPP.In the field of graphene on SiC we will focus on the optimization of growth conditions for epitaxial graphene on Si-face SiC, on the analysis of dislocations in graphene, on the rotational disorder in multilayer graphene on C-face SiC, and on the growth of graphene on non-polar SiC surfaces. In addition we will study the growth of molecular overlayers on graphene on SiC which is an interesting tool for the precise control over the charge carrier type and density in graphene. We will provide access to the LEEM instrument and support to several groups. Together with U. Starke (MPI für Festkörperforschung) we will study the formation of graphene ribbons on patterned SiC surfaces. In collaboration with J. Wintterlin (LMU München) we will investigate the growth of graphene on metal substrates. The growth of graphene/h-BN heterostructures will be investigated together with C. Busse (Universität Köln) and we will collaborate with J. M. Lopes and A. Hernandez-Minguez (PDI Berlin) on the growth of graphene by MBE and by thermal decomposition of SiC. Finally, we will investigate the growth of graphene on diamond surfaces in collaboration with C. Nebel (Fraunhofer IAF, Freiburg).

石墨烯基器件的开发取决于高质量石墨烯层的可用性。在中心项目Graphene中研究了几种合成石墨烯的竞争方法。其中包括碳化硅表面上的热活化生长、金属表面上的化学气相沉积（CVD）、自组装单层的热转化和分子束外延（MBE）。成功的先决条件是对所得层的结构和电子性质进行彻底表征。表面科学技术，如光电子能谱（XPS，ARPES），低能电子衍射（LEED）和扫描隧道显微镜（STM）和光谱（STS）非常适合研究石墨烯的性质在大规模或原子尺度。低能电子显微镜（LEEM）是一种合适的方法来研究从几十微米到几十纳米的长度尺度上的石墨烯层的结构和电子特性，空间分辨率为5 nm。LEEM与STM相比速度快，也可用于石墨烯生长的原位研究。最近的工作表明，LEEM是一个不可或缺的方法为石墨烯的生长过程的发展。因此，在SPP的第一个供资期间安装了LEEM系统。在这里，我们寻求资金继续这一项目。在该项目中，我们将继续研究SiC表面上石墨烯的生长和操作，并为SPP的用户提供LEEM设置。在SiC上石墨烯领域，我们将专注于Si面SiC上外延石墨烯生长条件的优化，石墨烯中位错的分析，C面SiC上多层石墨烯中的旋转无序，以及石墨烯在非极性SiC表面上的生长。此外，我们将研究在SiC上的石墨烯上的分子覆盖层的生长，这是精确控制石墨烯中电荷载流子类型和密度的有趣工具。我们将提供LEEM仪器的使用权，并为几个团体提供支持。与U。Starke（MPI für Festkörperforschung）将研究图案化SiC表面上石墨烯带的形成。与J. Wintterlin（LMU München）合作，我们将研究石墨烯在金属基底上的生长。石墨烯/h-BN异质结构的生长将与C. Busse（UniversitätKöln）和我们将与J.M. Lopes和A. Hernandel-Minguez（PDI柏林）对通过MBE和通过SiC的热分解生长石墨烯的研究。最后，我们将与C. Nebel（Fraunhofer IAF，弗赖堡）。