Proximity induced superconductivity in graphene on SiC by intercalation

SiC 上石墨烯插层的邻近诱导超导性

• 批准号: 470746116
• 负责人: Professor Dr. Thomas Seyller
• 金额: --
• 依托单位: Professur für Experimentalphysik mit dem Schwerpunkt Technische Physik
• 依托单位国家: 德国
• 项目类别: Research Units
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/470746116?language=en
• 关键词: Proximity; induced; superconductivity; graphene; SiC

Epitaxial graphene on SiC, which can be grown with high quality on an insulating substrate, provides excellent opportunities for applications as well as fundamental studies of graphene properties. The development of intercalation of different species into the interface between the SiC substrate and epitaxial graphene has greatly expanded these opportunities. In particular it opens an avenue for tailoring graphene properties by proximity coupling. In this project we will use the concept of intercalation to investigate the proximity coupling of epitaxial graphene to correlated states. In particular we will investigate (i) the proximity induced superconductivity in graphene implemented by intercalated superconducting layers between SiC and graphene and (ii) the proximity induced interplay between Mott-Hubbard states of intercalated atomic superlattices and the overlying graphene.

SiC上的外延石墨烯可以在绝缘衬底上以高质量生长，为石墨烯性质的应用和基础研究提供了极好的机会。将不同物质嵌入到SiC衬底和外延石墨烯之间的界面中的开发极大地扩展了这些机会。特别是，它开辟了一条途径，通过邻近耦合定制石墨烯的属性。在这个项目中，我们将使用嵌入的概念来研究外延石墨烯与关联态的邻近耦合。特别是，我们将研究（i）在石墨烯中通过在SiC和石墨烯之间插入超导层实现的邻近诱导超导性，以及（ii）插入原子超晶格的Mott-Hubbard态和覆盖石墨烯之间的邻近诱导相互作用。