CAREER: Low Dimension Column III-Nitride (III-N) Metal Oxide Semiconductor (MOS) Structures for Terahertz and Gigascale Electronics

职业：用于太赫兹和千兆电子的低维柱状 III 族氮化物 (III-N) 金属氧化物半导体 (MOS) 结构

• 批准号: 0547243
• 负责人: Douglas Barlage
• 金额: $ 40万
• 依托单位: North Carolina State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-04-01 至 2011-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0547243&HistoricalAwards=false
• 关键词: CAREER; Low; Dimension; Column; III

The objective of this research utilizes a recently identified Metal Oxide Semiconductor (MOS) interface on wide band gap materials, Column III-Nitride, (III-N) to address the scientific challenge of achieving Field Effect Transistors (FETs) suitable for gigascale integration (gigascale 1billion transistors) while simultaneously providing nearly terahertz (THz = 1000 billion cycles/second) cut off frequency performance. These goals will be achieved by fully developing a demonstrated oxide that provides the two dimensional gas for controlled charge transport. The performance goals will be achieved by the continued enhancement of a selective source-drain re-growth process with band gap and work function engineering techniques to this promising material system. Intellectual merit:This will be the first demonstration of an enhancement mode MOSFET constructed out of III-N materials with turn on and supply voltages less than 0.5V. This work will demonstrate capabilities of this new transistor to provide the basis for gigascale nano-electronics and millimeter-wave to THz circuitry: critical technology to maintain US leadership in integrated circuit and sensor technology. Broader impact of this research will be to utilize and further strengthen the lines of established communication with small and large companies that will guide the application of this work and identify areas for product insertion and development. Elements of this research will be condensed in educational modules to be distributed via the 4-H, program which is effective at reaching rural and underrepresented groups cost effectively. Based on feedback from experienced high-school and middle-school educators, these modules will be designed to provide a valuable recruitment and education tool for the next generation of scientists and engineers.

这项研究的目的是利用最近确定的宽带隙材料第三列氮化物 (III-N) 上的金属氧化物半导体 (MOS) 接口来解决实现适合千兆级集成（千兆级 10 亿个晶体管）的场效应晶体管 (FET) 的科学挑战，同时提供近太赫兹（THz = 10000 亿周期/秒）的截止频率性能。 这些目标将通过充分开发一种经过验证的氧化物来实现，该氧化物可为受控电荷传输提供二维气体。 通过持续增强选择性源漏再生长工艺以及带隙和功函数工程技术来实现这一有前途的材料系统的性能目标。 智力优点：这将是由 III-N 材料构建的增强型 MOSFET 的首次演示，其开启电压和电源电压低于 0.5V。 这项工作将展示这种新型晶体管的能力，为千兆级纳米电子学和毫米波到太赫兹电路提供基础：保持美国在集成电路和传感器技术领域领先地位的关键技术。 这项研究的更广泛影响将是利用并进一步加强与小型和大型公司建立的沟通渠道，这将指导这项工作的应用并确定产品插入和开发的领域。 这项研究的内容将被浓缩在教育模块中，并通过 4-H 计划进行分发，该计划能够有效地以成本效益的方式惠及农村和代表性不足的群体。 根据经验丰富的高中和初中教育工作者的反馈，这些模块旨在为下一代科学家和工程师提供有价值的招聘和教育工具。