Spin-dependent transport and magnetism in spin filter/silicon heterostructures

自旋滤波器/硅异质结构中的自旋相关输运和磁性

• 批准号: 174429350
• 负责人: Professorin Dr. Martina Müller
• 金额: --
• 依托单位: Arbeitsgruppe Physik komplexer Materialien
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2010
• 资助国家: 德国
• 起止时间: 2009-12-31 至 2013-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/174429350?language=en
• 关键词: Spin; dependent; transport; magnetism; spin

In this project, we propose the first studies of establishing spin filter tunnel contacts to the technologically most relevant semiconductor, silicon. In recent years, the field of spintronics has progressed rapidly, driven by the perspective to utilize the electron s spin degree of freedom for new applications. Numerous concepts have been envisioned for efficient spin injection and -detection, such as dedicated ferromagnet-insulator contacts based on magnetic random access memory cell achitectures. Still missing, however, are spintronic injector/-detector materials with high spin polarization and the ability to be conductance matched and epitaxially integrated with silicon. Our project aims at bridging this gap, demonstrating „spin filter functionality in highly spin-selective, resistivity-matched magnetic semiconductor tunnel contacts grown directly on silicon. We expect, that our proposed work will open up an exciting category of ferromagnetic materials for spin injection and -detection in semiconductors and provide a fundamental understanding on magnetism, interface control and spin transport of magnetic semiconductor/silicon heterostructures.

在这个项目中，我们提出了建立自旋滤波器隧道接触技术上最相关的半导体，硅的第一个研究。近年来，利用电子的自旋自由度进行新应用的观点推动了自旋电子学领域的迅速发展。为了实现高效的自旋注入和检测，已经设想了许多概念，例如基于磁性随机存取存储单元结构的专用铁磁-绝缘体触点。然而，仍然缺少具有高自旋极化、电导匹配和与硅外延集成能力的自旋电子注入/检测器材料。我们的项目旨在弥合这一差距，展示“高自旋选择性，电阻率匹配的磁性半导体隧道触点直接生长在硅上的自旋滤波器功能”。我们期望，我们所提出的工作将为半导体中的自旋注入和检测开辟一个令人兴奋的铁磁材料类别，并为磁性半导体/硅异质结构的磁性，界面控制和自旋输运提供基本的理解。

项目成果

Heteroepitaxy and ferromagnetism of EuO/MgO (001): A route towards combined spin- and symmetry-filter tunneling

• DOI: 10.1103/physrevb.88.245302
• 发表时间: 2013-12
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: C. Caspers;A. Gloskovskij;W. Drube;C. Schneider;Martin Müller