ITR: Institute for the Theory of Advanced Materials in Information Technology
ITR:信息技术先进材料理论研究所
基本信息
- 批准号:0551195
- 负责人:
- 金额:$ 209.47万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2005
- 资助国家:美国
- 起止时间:2005-09-01 至 2009-08-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This award was made on a 'medium' category proposal submitted in response to the ITR solicitation, NSF-02-168. The Division of Materials Research and the Advanced Computational Infrastructure and Research Division provide funding to establish an Institute for the Theory of Advanced Materials in Information Technology which performs computational and theoretical research to advance significantly the ability to predict and understand the properties of advanced materials in information technology. Silicon based technology dominates the ongoing miniaturization of electronic components. For the past thirty years, Moore's law has characterized progress. However, Moore's law cannot hold indefinitely. There are serious scientific and technological issues that must be resolved as device features shrink to nanoscale dimensions where quantum mechanical effects become important. For example, design rules for transport based on simple Ohmic behavior and field-effect transistor digital function will become suspect as a consequence of quantum effects. An Institute for the Theory of Advanced Materials in Information Technology will be constructed and dedicated to focus research on better understanding and predicting these effects in electronic materials. New materials other than silicon will be explored theoretically and computationally for the construction of electronic devices at small dimensions. The Institute aims to promote innovations in new materials and to advance research related to information technology. Representative research areas within the institute will include the study of organic and plastic semiconductors, low-k dielectrics, dilute magnetic semiconductors and spintronic devices, carbon nanotubes, and nanowires. Research activities will also include examining multiscale phenomena and developing high performance algorithms targeted at simulating and modeling the properties of advanced materials. Broader impacts: The Institute will provide a focal point in the community for the creation of new knowledge and computational tools for advanced electronic materials. Through computational materials research, it will contribute to the future directions of CMOS technology and to developing new technologies. It will provide educational experiences for postdoctoral fellows, graduate students and undergraduates. The institute will use the Internet to allow the broader computational materials research community access to state of the art source codes. The Institute will sponsor a visitor program, which will include a strong international component, and it will host an annual workshop. Through the visitor program, researchers will have access to high performance computational platforms and algorithms for the simulation of materials. The Institute will facilitate research and education collaborations with students and faculty from underrepresented groups. In particular, a mentoring program for faculty-student teams from four-year colleges and tribal colleges will be initiated. The Institute will partner with the private sector on both technological and scientific projects to integrate research into broader programs and activities of direct national interest. An Industrial Advisory board will be established within the Institute to ensure that the research activities are appropriate and relevant for current technological needs. %%%This award was made on a 'medium' category proposal submitted in response to the ITR solicitation, NSF-02-168. The Division of Materials Research and the Advanced Computational Infrastructure and Research Division provide funding to establish an Institute for the Theory of Advanced Materials in Information Technology which performs computational and theoretical research to advance significantly the ability to predict and understand the properties of advanced materials in information technology. Silicon based technology dominates the ongoing miniaturization of electronic components. For the past thirty years, Moore's law has characterized progress. However, Moore's law cannot hold indefinitely. There are serious scientific and technological issues that must be resolved as device features shrink to nanoscale dimensions where quantum mechanical effects become important. For example, design rules for transport based on simple Ohmic behavior and field-effect transistor digital function will become suspect as a consequence of quantum effects. An Institute for the Theory of Advanced Materials in Information Technology will be constructed and dedicated to focus research on better understanding and predicting these effects in electronic materials. New materials other than silicon will be explored theoretically and computationally for the construction of electronic devices at small dimensions. The Institute aims to promote innovations in new materials and to advance research related to information technology. Representative research areas within the institute will include the study of organic and plastic semiconductors, low-k dielectrics, dilute magnetic semiconductors and spintronic devices, carbon nanotubes, and nanowires. Research activities will also include examining multiscale phenomena and developing high performance algorithms targeted at simulating and modeling the properties of advanced materials. Broader impacts: The Institute will provide a focal point in the community for the creation of new knowledge and computational tools for advanced electronic materials. Through computational materials research, it will contribute to the future directions of CMOS technology and to developing new technologies. It will provide educational experiences for postdoctoral fellows, graduate students and undergraduates. The institute will use the Internet to allow the broader computational materials research community access to state of the art source codes. The Institute will sponsor a visitor program, which will include a strong international component, and it will host an annual workshop. Through the visitor program, researchers will have access to high performance computational platforms and algorithms for the simulation of materials. The Institute will facilitate research and education collaborations with students and faculty from underrepresented groups. In particular, a mentoring program for faculty-student teams from four-year colleges and tribal colleges will be initiated. The Institute will partner with the private sector on both technological and scientific projects to integrate research into broader programs and activities of direct national interest. An Industrial Advisory board will be established within the Institute to ensure that the research activities are appropriate and relevant for current technological needs. ***
该奖项是根据ITR招标(NSF-02-168)提交的“中等”类别提案获得的。材料研究部和高级计算基础设施和研究部提供资金建立信息技术先进材料理论研究所,该研究所进行计算和理论研究,以显著提高预测和理解信息技术先进材料特性的能力。硅基技术主导着正在进行的电子元件小型化。在过去的三十年里,摩尔定律是进步的标志。然而,摩尔定律不可能永远成立。当器件的特征缩小到纳米尺度时,量子力学效应变得非常重要,必须解决严重的科学和技术问题。例如,由于量子效应,基于简单欧姆行为和场效应晶体管数字功能的输运设计规则将变得可疑。将建立信息技术先进材料理论研究所,致力于更好地理解和预测电子材料中的这些效应。除硅以外的新材料将在理论和计算上探索用于小尺寸电子器件的构造。该研究所旨在促进新材料的创新,并推进与信息技术有关的研究。该研究所的代表性研究领域将包括有机和塑料半导体、低k介电材料、稀磁半导体和自旋电子器件、碳纳米管、纳米线等。研究活动还将包括检查多尺度现象和开发高性能算法,旨在模拟和建模先进材料的特性。更广泛的影响:该研究所将在社区中为先进电子材料的新知识和计算工具的创造提供一个焦点。通过计算材料的研究,将有助于CMOS技术的未来方向和新技术的发展。它将为博士后、研究生和本科生提供教育体验。该研究所将利用互联网允许更广泛的计算材料研究社区访问最先进的源代码。该研究所将赞助一个访问项目,其中将包括一个强有力的国际组成部分,并将举办一次年度研讨会。通过访问计划,研究人员将有机会获得高性能的计算平台和模拟材料的算法。该研究所将促进与来自代表性不足群体的学生和教师的研究和教育合作。特别是,将对4年制大学和部落大学的教员-学生组合进行指导。研究所将在技术和科学项目上与私营部门合作,将研究纳入与国家直接利益有关的更广泛的计划和活动。将在研究所内设立一个工业咨询委员会,以确保研究活动适合当前的技术需要。该合同是根据ITR招标(NSF-02-168)提交的“中等”类别提案授予的。材料研究部和高级计算基础设施和研究部提供资金建立信息技术先进材料理论研究所,该研究所进行计算和理论研究,以显著提高预测和理解信息技术先进材料特性的能力。硅基技术主导着正在进行的电子元件小型化。在过去的三十年里,摩尔定律是进步的标志。然而,摩尔定律不可能永远成立。当器件的特征缩小到纳米尺度时,量子力学效应变得非常重要,必须解决严重的科学和技术问题。例如,由于量子效应,基于简单欧姆行为和场效应晶体管数字功能的输运设计规则将变得可疑。将建立信息技术先进材料理论研究所,致力于更好地理解和预测电子材料中的这些效应。除硅以外的新材料将在理论和计算上探索用于小尺寸电子器件的构造。该研究所旨在促进新材料的创新,并推进与信息技术有关的研究。该研究所的代表性研究领域将包括有机和塑料半导体、低k介电材料、稀磁半导体和自旋电子器件、碳纳米管、纳米线等。研究活动还将包括检查多尺度现象和开发高性能算法,旨在模拟和建模先进材料的特性。更广泛的影响:该研究所将在社区中为先进电子材料的新知识和计算工具的创造提供一个焦点。通过计算材料的研究,将有助于CMOS技术的未来方向和新技术的发展。它将为博士后、研究生和本科生提供教育体验。该研究所将利用互联网允许更广泛的计算材料研究社区访问最先进的源代码。该研究所将赞助一个访问项目,其中将包括一个强有力的国际组成部分,并将举办一次年度研讨会。通过访问计划,研究人员将有机会获得高性能的计算平台和模拟材料的算法。该研究所将促进与来自代表性不足群体的学生和教师的研究和教育合作。特别是,将对4年制大学和部落大学的教员-学生组合进行指导。研究所将在技术和科学项目上与私营部门合作,将研究纳入与国家直接利益有关的更广泛的计划和活动。将在研究所内设立一个工业咨询委员会,以确保研究活动适合当前的技术需要。* * *
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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James Chelikowsky其他文献
James Chelikowsky的其他文献
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{{ truncateString('James Chelikowsky', 18)}}的其他基金
DMREF:SusChEM:Collaborative Research: Design and Synthesis of Novel Magnetic Materials
DMREF:SusChEM:合作研究:新型磁性材料的设计与合成
- 批准号:
1729202 - 财政年份:2017
- 资助金额:
$ 209.47万 - 项目类别:
Standard Grant
DMREF:SusChEM:Collaborative Research: Design and Synthesis of Novel Magnetic Materials
DMREF:SusChEM:合作研究:新型磁性材料的设计与合成
- 批准号:
1435219 - 财政年份:2014
- 资助金额:
$ 209.47万 - 项目类别:
Standard Grant
Collaborative: Extensible Languages for Sustainable Development of High Performance Software in Materials Science
协作:用于材料科学高性能软件可持续开发的可扩展语言
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1047997 - 财政年份:2010
- 资助金额:
$ 209.47万 - 项目类别:
Standard Grant
CDI-TYPE I-COLLABORATIVE Materials Informatics: Computational Tools for Discovery and Design
CDI-TYPE I-COLLABORATIVE 材料信息学:用于发现和设计的计算工具
- 批准号:
0941645 - 财政年份:2009
- 资助金额:
$ 209.47万 - 项目类别:
Standard Grant
ITR: Institute for the Theory of Advanced Materials in Information Technology
ITR:信息技术先进材料理论研究所
- 批准号:
0325218 - 财政年份:2003
- 资助金额:
$ 209.47万 - 项目类别:
Continuing Grant
High Performance Algorithms for Electronic Materials
电子材料的高性能算法
- 批准号:
0130395 - 财政年份:2002
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$ 209.47万 - 项目类别:
Continuing Grant
High Performance Algorithms for Electronic Materials
电子材料的高性能算法
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9873664 - 财政年份:1999
- 资助金额:
$ 209.47万 - 项目类别:
Continuing Grant
High Performance Algorithms for Electronic Materials
电子材料的高性能算法
- 批准号:
9525885 - 财政年份:1995
- 资助金额:
$ 209.47万 - 项目类别:
Continuing Grant
Interface Formation with Atoms, Ions, and Clusters
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9216178 - 财政年份:1993
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$ 209.47万 - 项目类别:
Continuing Grant
Massively Parallel Algorithms for Modeling the Structure of Liquids and Liquid-Solid Interfaces
用于模拟液体结构和液固界面的大规模并行算法
- 批准号:
9217287 - 财政年份:1992
- 资助金额:
$ 209.47万 - 项目类别:
Standard Grant
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