SBIR Phase II: Reduction Of The Critical Current In Spin Transfer Switching Through Anisotropy Engineering

SBIR 第二阶段：通过各向异性工程降低自旋转移切换中的临界电流

• 批准号: 0646327
• 负责人: Daniel Lottis
• 金额: --
• 依托单位: Grandis, Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-03-15 至 2011-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0646327&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Reduction; Critical

This Small Business Innovation Research (SBIR) Phase II project will address the critical steps needed to manufacture a fast, non-volatile, magnetic random access memory (MRAM) based on spin transfer torque (STT-RAM). STT-RAM which uses spin polarized current to switch individual bits is predicted to have better scaling properties than conventional MRAM which uses magnetic fields. This Phase II project will focus on sub-100nm device manufacturability, device performance testing, and circuit design to develop a set of results which will enable the creation of a 1 Mb demonstration chip. The STT-RAM test chip is needed to prove the technology for customers. The results obtained from this project will include the development of arrays of sub-100nm bits, with the appropriate thermal stability, read/write characteristics and distributions. Also addressed will be the reliability of reading and writing such small devices. The project will develop processes for manufacturing sub-100nm structures. Finally, a simulation of read and write circuitry based on STT-RAM will be produced allowing for tape-out of a 1 Mb test chip.Commercially, as microelectronics scales to smaller sizes and higher speeds, more features are added to typical consumer electronic devices and the demands on memory continues to grow. These demands and the inherent limitations of existing technologies create opportunities for new memory technologies to fill. As a leading candidate for a future universal memory that incorporates all the desired characteristics; non-volatility, high speed, low power, unlimited rewriting capability, extendibility to future semiconductor nodes; STT-RAM is in a strong position to take advantage of these opportunities.

该小型企业创新研究（SBIR）第二阶段项目将解决制造基于自旋转移矩（STT-RAM）的快速，非易失性磁性随机存取存储器（MRAM）所需的关键步骤。STT-RAM使用自旋极化电流来切换单个位，预计比使用磁场的传统MRAM具有更好的缩放特性。该项目的第二阶段将专注于亚100纳米器件的可制造性，器件性能测试和电路设计，以开发一系列结果，从而能够创建1 Mb演示芯片。需要STT-RAM测试芯片来为客户证明该技术。从该项目获得的结果将包括亚100纳米位阵列的开发，具有适当的热稳定性，读/写特性和分布。还将解决的可靠性阅读和写这样的小设备。该项目将开发制造亚100纳米结构的工艺。最后，将产生基于STT-RAM的读取和写入电路的模拟，允许流片出1 Mb的测试chipe. Commercial，随着微电子规模的更小的尺寸和更高的速度，更多的功能被添加到典型的消费电子设备和对存储器的需求持续增长。这些需求和现有技术的固有局限性为新的存储器技术创造了机会。作为未来通用存储器的主要候选者，它包含所有所需的特性：非易失性，高速，低功耗，无限重写能力，可扩展到未来的半导体节点; STT-RAM处于有利地位，可以利用这些机会。