Atomistic mechanisms of the mechanical behaviour of nanostructured silicon carbide films
Atomistic mechanisms of the mechanical behaviour of nanostructured silicon carbide films
批准号:
DP0985450
负责人:
Prof Xiaozhou Liao
金额:
$20.8万
依托单位:
依托单位国家:
澳大利亚
项目类别:
Discovery Projects
财政年份:
2009
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2009-01-01 至 2015-12-31
中文摘要
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英文摘要
Advanced silicon carbide (SiC) ceramics are leading candidates for applications in high-power, high-speed machining and high-temperature structural components. Superhardness and high ductility (or high fracture toughness), which have been realized in some nanostructured (ns) SiC films and nanowires, respectively, are desirable properties for many applications. This project aims to understand the mechanisms behind the exceptional properties in ns SiC and to explore the possibility of realizing the two properties in the same ns SiC. The results obtained from this research will be very important for guiding the structural design of SiC with exceptional mechanical properties which will have a wide range of structural applications.
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