Collaborative Research: Design, Modeling, Automation and Experimentation of

协作研究：设计、建模、自动化和实验

• 批准号: 0702204
• 负责人: Chongwu Zhou
• 金额: $ 31.81万
• 依托单位: University of Southern California
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-08-01 至 2011-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0702204&HistoricalAwards=false
• 关键词: Collaborative; Research; Design; Modeling; Automation

Collaborative Proposal ID: 0702343, 0702204PI name(s): Subhasish Mitra, Chongwu ZhouInstitution(s): Stanford University, University of Southerm CaliforniaTitle: Design, Modeling, Automation and Experimentation of Imperfection Immune Carbon Nanotube Field Effect Transitor CircuitsABSTRACT:One-dimensional nanodevices such as Carbon Nanotube Field-Effect Transistors (CNFETs) are promising candidates as extensions to traditional Silicon transistors due to excellent device performance. Device scaling of silicon transistors has been the fundamental basis for the phenomenal success of the semiconductor and electronics industry. While there have been significant accomplishments in scientific discovery in recent years at the single-device level at the nanoscale, a major gap exists between such single-device-level results and the research required to harness the science into practical design technologies competitive with silicon technologies at the end of device scaling. This project uses an interdisciplinary approach to overcome fundamental challenges by combining novel CNFET-based robust imperfection-immune design and automation techniques together with new CNFET modeling and processing techniques. The ideas developed in this project will be experimentally validated through working CNFET-based circuits. This research program also integrates research and education required to explore novel, nanoscale electronic designs through graduate and undergraduate training, and public education on nanotechnology.

合作提案ID: 0702343, 0702204PI名称：Subhasish Mitra， zhouchongwu工作单位：斯坦福大学，南加州大学题目：缺陷免疫碳纳米管场效应晶体管电路的设计、建模、自动化和实验摘要：碳纳米管场效应晶体管（cnfet）等一维纳米器件由于其优异的器件性能，是传统硅晶体管的有前途的扩展。硅晶体管的器件缩放是半导体和电子工业取得巨大成功的根本基础。虽然近年来在纳米级单器件水平的科学发现方面取得了重大成就，但在这种单器件水平的结果与将科学应用于实际设计技术与硅技术在器件规模的最后阶段竞争所需的研究之间存在重大差距。该项目采用跨学科的方法，通过将新的基于CNFET的鲁棒不完美免疫设计和自动化技术与新的CNFET建模和处理技术相结合，来克服基本挑战。本项目开发的想法将通过基于cnfet的工作电路进行实验验证。该研究项目还通过研究生和本科生的培训，以及对纳米技术的公共教育，整合了探索新颖的纳米级电子设计所需的研究和教育。