Computational Modeling of Indium and Enriched-Indium Gallium Nitride Epitaxy under High-Pressure Chemical Vapor Deposition

高压化学气相沉积下铟和富铟氮化镓外延的计算模型

• 批准号: 0705219
• 负责人: Beatriz Cardelino
• 金额: $ 21.14万
• 依托单位: Spelman College
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-07-01 至 2011-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0705219&HistoricalAwards=false
• 关键词: Computational; Modeling; Indium; Enriched; Gallium

This award to Spelman College by the Solid State Materials Chemistry program in the Division of Materials Research is to model high pressure chemical vapor deposition aimed at the growth of indium and other group III nitride alloys. Computational models that couple complex chemical kinetics systems with fluid dynamics will be used to simulate the chemical vapor deposition of indium nitride and indium-rich group III-nitride at high pressures. The goal is to determine the optimal design reactor parameters and ambient conditions, and to understand the complex heterogeneous kinetics. A novel combination of theory, modeling and experiments will be used to develop and understand fundamental gas phase and interfacial reaction constants. The results coming out of the simulation experiments will be beneficial in interpreting the experimental results, and the potential pay-offs in basic science and in technology could be great. This research will be carried out in collaboration with Georgia Tech and Georgia State University. The proposal is aimed directly at areas of group III-nitride growth which are currently not understood and which are fertile ground both for good, solid basic science and for technological development.This multi-disciplinary project will be an excellent training ground for undergraduate students at Spelman College in demonstrating the successful modeling of a complex growth process and experimental approaches. This close coupling of theory, modeling and experiment approaches could be appealing from an educational perspective. This project will expose undergraduate students early in their careers to the idea that theory, modeling and experiment can and should be done in unison. Interactions among students and faculty members at Spelman College, Georgia State University and Georgia Tech would be an added benefit to all involved in the project.

该奖项由材料研究部的固态材料化学计划授予斯佩尔曼学院，旨在模拟高压化学气相沉积，旨在生长铟和其他III族氮化物合金。 将复杂的化学动力学系统与流体动力学耦合的计算模型将用于模拟氮化铟和富铟III族氮化物在高压下的化学气相沉积。目标是确定最佳设计反应器参数和环境条件，并了解复杂的非均相动力学。理论，建模和实验的新组合将用于开发和理解基本的气相和界面反应常数。模拟实验的结果将有助于解释实验结果，在基础科学和技术方面的潜在回报可能是巨大的。这项研究将与格鲁吉亚理工学院和格鲁吉亚州立大学合作进行。 该提案直接针对目前尚不清楚的第三族氮化物生长领域，这些领域是良好、坚实的基础科学和技术发展的沃土。这个多学科项目将成为斯佩尔曼学院本科生的优秀培训基地，展示复杂生长过程和实验方法的成功建模。 从教育的角度来看，这种理论，建模和实验方法的紧密结合可能是有吸引力的。这个项目将使本科生在职业生涯的早期就认识到理论、建模和实验可以而且应该统一进行。斯佩尔曼学院、格鲁吉亚州立大学和格鲁吉亚理工学院的学生和教职员工之间的互动将给所有参与该项目的人带来额外的好处。