课题基金 / 基金详情

NIRT:Chemically Directed Surface Alignment and Wiring of Self-Assembled Nanoelectrical Circuits

NIRT:Chemically Directed Surface Alignment and Wiring of Self-Assembled Nanoelectrical Circuits
NIRT:自组装纳米电路的化学定向表面对准和布线
批准号:
0708347
负责人:
John Harb
金额:
$0.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2007
资助国家:
美国
项目状态:
已结题
起止时间:
2007-07-01 至 2011-06-30

项目摘要

项目成果

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中文摘要
翻译
0708347约翰N.该提案是响应主动纳米结构和纳米系统倡议,NSF 06-595,类别NIRT。 自上而下制造电路的替代方案是使用分子的自组装来形成最小的电路结构,并将这些分子电路与通过自上而下技术制造的互连联合收割机组合。 分子和分子模板的尺寸使得具有特别窄的线宽的器件是可能的。 此外,自组装本身是平行的,使其能够以合理的成本进行高通量制造。 该项目旨在联合收割机的自下而上的自组装与自上而下的图案化的互补优势,与开发的纳米电子电路的制造过程的目标。为了实现这一目标,一个跨学科的研究小组,ASCENT(组装nanoCircuit元件的核酸模板),已在杨百翰大学成立。 努力集中在四个关键技术的开发和改进上:(1)溶液相分子电路组装,(2)高分辨率化学表面图案化,(3)分子模板的高分辨率金属化,以及(4)分子电路在表面上的化学定向组装和集成。 分子电路将使用定制的DNA模板在溶液中自组装(“试管电路”)。 DNA自组装是特别强大的,因为大量的可能的核酸序列,使DNA链相互之间以及与其他分子的高度选择性结合成为可能。 化学机械图案化,我们已经开发的方法,将用于化学改性的二氧化硅基板。 这种化学图案化将提供锚点以将分子电路附着和对准在表面上,以及提供用于局部布线到锚定电路的手段,所有这些都具有10 nm的分辨率。 然后,暴露的DNA和化学模板化的线两者的无电镀金属将使有源电路元件彼此电连接并电连接到更大规模的架构。 最终的结果将是DNA模板分子电路,这些电路已经在氧化物表面上局部排列和布线。 类似于目前在半导体工业中使用的互连技术,然后可以应用于创建更大的全球布线所需的实际设备的基础上提出的分子电路。更广泛的影响,包括强调本科研究,推广计划,以当地的西班牙裔社区和其他人,和研究生教育的多学科环境。 该技术的潜在社会影响是,它可以为半导体行业对更高分辨率的需求提供创新的解决方案,并且它使用从当前微制造工艺自然演变并与之良好连接的技术来实现这一点。
英文摘要
0708347John N. HarbThis proposal was received in response to the Active Nanostructures and Nanosystems initiative, NSF 06-595, category NIRT. An alternative to top-down fabrication of electrical circuits is to use self-assembly of molecules to form the smallest circuit structures, and combine these molecular circuits with interconnections fabricated by top-down techniques. The dimensions of molecules and molecular templates are such that devices with exceptionally narrow linewidths are possible. In addition, self-assembly is inherently parallel, making it amenable to high-throughput fabrication at reasonable cost. This project seeks to combine the complementary advantages of bottom-up self-assembly with top-down patterning, with the goal of developing a process for fabrication of nanoelectronic circuits.To accomplish this objective, an interdisciplinary research group, ASCENT (ASsembled nanoCircuit Elements by Nucleic acid Templating), has been formed at BYU. Efforts are focused on the development and refinement of four key technologies: (1) solution-phase molecular circuit assembly, (2) high-resolution chemical surface patterning, (3) high-resolution metallization of molecular templates, and (4) chemically directed assembly and integration of molecular circuits on surfaces. Molecular circuits will be self-assembled in solution using customized DNA templates ("test-tube circuits"). DNA self-assembly is particularly powerful because of the large number of possible nucleic-acid sequences that enable highly selective bonding of DNA strands to each other and to other molecules. Chemomechanical patterning, a method that we have developed, will be used to chemically modify the SiO2 substrate. This chemical patterning will provide anchor points to attach and align the molecular circuits on the surface, as well as provide a means for local wiring to the anchored circuit, all with a resolution 10 nm. Electroless metal plating of both the exposed DNA and chemically templated lines will then electrically connect active circuit elements to each other and to the larger-scale architecture. The net result will be DNA-templated molecular circuits that have been aligned and wired locally on an oxide surface. Interconnect technology similar to that used currently in the semiconductor industry can then be applied to create the larger global wiring needed for practical devices based on the proposed molecular circuits.Broader impacts including a strong emphasis on undergraduate research, an outreach program to the local Hispanic community and others, and a multidisciplinary environment for graduate education. The potential societal impact of the technology is that it may provide an innovative solution to the semiconductor industry's need for greater resolution, and it does so using technologies that evolve naturally from and connect well to current microfabrication processes.
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  • 批准号:
    1540537
  • 项目类别:
    Standard Grant
  • 资助金额:
    $10.0万
  • 财政年份:
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  • 资助金额:
    $0.0万
  • 财政年份:
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  • 负责人:
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  • 依托单位:
SGER: Molecular Simulations of the Interface and Double Layer for Model Copper-Electrodeposition Baths: Effects of Organic Additives
  • 批准号:
    0215786
  • 项目类别:
    Standard Grant
  • 资助金额:
    $7.0万
  • 财政年份:
    2002
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    John Harb
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  • 批准号:
    9980835
  • 项目类别:
    Standard Grant
  • 资助金额:
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  • 财政年份:
    2000
  • 负责人:
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  • 依托单位:
海外基金