SBIR Phase I: Starter Wafers for Diamond MEMS Fabrication

SBIR 第一阶段：用于金刚石 MEMS 制造的起始晶圆

• 批准号: 0712454
• 负责人: Nicolaie Moldovan
• 金额: --
• 依托单位: ADVANCED DIAMOND TECHNOLOGIES
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-07-01 至 2008-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0712454&HistoricalAwards=false
• 关键词: SBIR; Phase; Starter; Wafers; Diamond

This Small Business Innovation Research Phase I project will determine the feasibility of making foundry-quality MEMS starter wafers composed of ultrananocrystalline diamond (UNCD) on SiO2 and on Si (diamond-on-insulator, DOI) in a strategy similar to silicon-on-insulator (SOI) wafers. The research team has solved problems of thickness uniformity, sp3/sp2 ratio uniformity, grain size uniformity, adhesion, and roughness (30 nm rms), but problems remain with the stress level, particle density (102 cm-2 particles 1 um mainly due to non-clean room processing), and limited uniformity of the acoustic velocity (14-16 km/s). Phase 1 will 1) implement a novel method for stress reduction to bring it down to -50 to + 100 MPa and prove the resulting level is conserved through subsequent thermal processing (deposition of oxide and nitride layers by LPCVD, PECVD), 2) prove that particle density on the device layer can be reduced to under 10/cm2 (for particles of size 1 um) while backside contamination can be eliminated by special seeding conditions and cleaning, and 3) optimize the deposition conditions to bring the acoustic velocity to the 16 km/s range with a 10% confidence level on 4" and 6 " diameter DOI wafers. UNCD has proven its advantages for MEMS components through its exceptional hardness, Young's modulus, toughness, acoustic velocity, smoothness, uniformity, bio-compatibility, and tunable conductivity. The commercialization of diamond MEMS products is inhibited by limited (high) quality diamond production capabilities, little experience with diamond by end users, and concerns that the seeding process (precursor of diamond growth) may lead to contamination issues. The present DOI product targets users at various levels (small companies, foundries, research centers) who want to enter the diamond MEMS realm. Diamond MEMS has great potential in RF-MEMS (resonators, filters, oscillators for wireless communication and information technology), bio-implantable chips (artificial retina, cochlear implants, implantable ID chips), electronics and material research (AFM probes, data storage devices, x-ray and electron optics), sensors (SAW sensors, vibrating cantilever sensors, etc).

该小型企业创新研究第一阶段项目将确定在SiO2和Si（绝缘体上金刚石，DOI）上制造由超纳米金刚石（UNCD）组成的铸造质量MEMS起始晶片的可行性，其策略类似于绝缘体上硅（SOI）晶片。研究小组已经解决了厚度均匀性、sp3/sp2比率均匀性、粒度均匀性、粘附性和粗糙度（30 nm rms）的问题，但问题仍然存在于应力水平、颗粒密度（102 cm-2颗粒1 um主要是由于非洁净室处理）和有限的声速均匀性（14-16 km/s）。第1阶段将1）实施一种新的应力降低方法，将其降低到-50至+100 MPa，并证明通过随后的热处理可以保持所得水平（通过LPCVD、PECVD沉积氧化物和氮化物层），2）证明器件层上的颗粒密度可以降低到10个/cm 2以下（对于尺寸为1 μ m的颗粒）虽然可以通过特殊的引晶条件和清洁来消除背面污染，3）优化沉积条件，使声速达到16 km/s的范围，4”和6“的置信水平为10%。直径DOI晶圆。UNCD已通过其出色的硬度、杨氏模量、韧性、声速、光滑度、均匀性、生物相容性和可调导电性证明了其在MEMS组件方面的优势。金刚石MEMS产品的商业化受到有限的（高）质量金刚石生产能力，最终用户对金刚石的经验很少，以及对播种过程（金刚石生长的前体）可能导致污染问题的担忧的抑制。目前的DOI产品针对的是希望进入金刚石MEMS领域的各级用户（小公司、铸造厂、研究中心）。金刚石MEMS在RF-MEMS（用于无线通信和信息技术的谐振器、滤波器、振荡器）、生物植入芯片（人工视网膜、人工耳蜗、植入式ID芯片）、电子和材料研究（AFM探针、数据存储设备、X射线和电子光学）、传感器（SAW传感器、振动悬臂梁传感器等）等方面具有巨大的潜力。