SBIR Phase II: X-Ray Focusing Device for 20-100 keV Photon Energies

这个小型企业创新研究二期项目的目标是制造能够将高能x射线（从10 keV到100 keV以上）聚焦到小至7纳米的光斑尺寸的设备。这种能力对于成像、微层析成像以及材料的元素和结构分析至关重要，并将允许在光谱范围内和目前无法获得的分辨率下进行成像。这些设备将使科学家能够更好地描绘结构和功能的相互作用，用于各种各样的应用，包括开发救生药物，创造高科技设备的材料，以及许多重要的基础科学目的。设备吗?主要用途将在高端同步辐射设施和x射线显微镜与专门的工业和研究环境。这些设备构成了一类特殊的高价值消耗品，目前的全球市场价值约为700万美元，在不久的将来有可能增加到1400万美元以上。这个项目的智力价值是三重的。首先，创新的制造方法探索和利用原子层沉积（ALD）的最终能力，以实现非常厚的多层薄膜的纳米级平滑。与依赖于沉积到金属丝和切片的相关方法不同，该方法使用ALD将低折射率和高折射率材料序列沉积到批量制造的圆柱形硅前驱体上，层厚度从几纳米到几十纳米不等，控制良好。随后，抛光晶圆将产生在单个晶圆上具有数百个高价值聚焦器件的膜，从而最大限度地降低每个器件的加工成本。其次，所设想的晶圆级加工方法允许对前驱体进行必要的倾斜控制，这在导线上是不可能的，以获得更好的聚焦特性。第三，该方法可扩展到两层以上材料层的沉积序列，从而可以制造具有单焦点的阶梯渐变折射率衍射器件，并具有最终的衍射效率。第一阶段确定了单个关键工艺，并证明了它们集成到完整制造序列中的能力，而第二阶段将处理原型的制造和测试，并为生产做准备，使用长时间的原子层沉积工艺，这是功能器件所必需的。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

This Small Business Innovation Research Phase II project targets the fabrication of devices capable of focusing X-rays with high energy (from 10 keV to above 100 keV) to spot sizes as small as 7 nanometers. This capability is critical for imaging, microtomography, and elemental and structural analyses of materials and will permit imaging in spectral ranges and at resolutions unavailable today. These devices will enable scientists to better image the interplay of structure and functionality for a wide variety of applications, including the development of life-saving drugs, the creation of materials for high-tech devices, and for a number of important basic scientific purposes. The devices? primary use will be in high-end synchrotron radiation facilities and in X-ray microscopes with in specialized industrial and research environments. These devices form a special class of high-value consumables, addressing a global market segment worth about $7 million today with the potential to increase to more than $14 million in the near future. The intellectual merit of this project is threefold. First, the innovative method of fabrication explores and exploits the ultimate capability of atomic layer deposition (ALD) for achieving nanometer-scale smoothness in very thick, multilayer films. Unlike related methods that rely on deposition onto wires and slicing, this method uses ALD to deposit sequences of low and high refractive index materials onto batch-fabricated cylindrical silicon precursors, with well-controlled layer thicknesses varying from a few nanometers to tens of nanometers. Subsequently, polishing the wafer will yield membranes with hundreds of high-value focusing devices on a single wafer, minimizing the processing costs per device. Second, the envisioned wafer-level processing method allows for a necessary tilt control of the precursors, not possible with wires, for better focusing properties. Third, the method is extendable towards depositing sequences of more-than-two material layers, which enables the fabrication of step-wise graded index diffractive devices with single foci and featuring ultimate diffraction efficiency. Phase I qualified the individual key processes and proved their integration capability into a complete fabrication sequence, while Phase II will deal with the fabrication and testing of prototypes and preparation for production, using long runs of atomic layer deposition processes, as is necessary for functional devices.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.