SBIR Phase II: Development of Efficient Short-Wavelength Radiation Sources For Next-Generation Lithography

SBIR 第二阶段：开发用于下一代光刻的高效短波长辐射源

• 批准号: 0724183
• 负责人: Sivanandan Harilal
• 金额: --
• 依托单位: Hyperion Scientific, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-09-15 至 2009-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0724183&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Development; Efficient

The Small Business Innovation Research (SBIR) Phase II project will pursue the development of novel plasma technologies for creating highly efficient, short-wavelength radiation sources for use in next-generation semiconductor chip manufacturing. The development of radiation sources that efficiently emit light at wavelengths near 13.5 nm is crucial to the expected emergence of EUV lithography as the primary technique used in manufacturing integrated circuits and DRAM near the end of this decade. Laser-produced plasma experiments will be conducted to validate and refine the novel high-efficiency, low-debris EUV light source designs developed in our previous work. Comparisons between experimental data and simulations performed using state-of-the-art simulation tools will facilitate the development of light sources with high 13.5 nm conversion efficiencies. This project will lead to lower cost, more efficient, and more robust EUV lithography light sources for use in the manufacturing of next-generation semiconductor chips. Short-wavelength radiation sources are applicable to a wide variety of research areas, and have significant value in commercial applications, basic research, and defense research and technology. Such sources are valued not only for use in EUV lithography, but also in medical research, instrumentation, and technology. While this project will focus on the development of plasma-based technologies for creating highly efficient light sources for EUV lithography, it is likely that techniques and capabilities developed under this project will further the development of plasma light sources applicable to other major areas of research and technology.

小型企业创新研究（SBIR）第二阶段项目将致力于开发新型等离子体技术，以创建用于下一代半导体芯片制造的高效短波长辐射源。 有效发射波长接近13.5 nm的光的辐射源的开发对于EUV光刻作为本世纪末制造集成电路和DRAM的主要技术的预期出现至关重要。 将进行激光产生等离子体实验，以验证和完善我们以前工作中开发的新型高效率，低碎片EUV光源设计。 使用最先进的模拟工具进行的实验数据和模拟之间的比较将有助于开发具有高13.5 nm转换效率的光源。 该项目将导致更低的成本，更高效，更强大的EUV光刻光源用于制造下一代半导体芯片。 短波长辐射源适用于各种研究领域，在商业应用、基础研究和国防研究与技术中具有重要价值。 这种光源不仅在EUV光刻中有价值，而且在医学研究、仪器和技术中也有价值。 虽然该项目将重点开发基于等离子体的技术，为极紫外光刻技术创建高效光源，但该项目下开发的技术和能力很可能将进一步开发适用于其他主要研究领域的等离子体光源和技术。