SBIR Phase II: Photon-Assisted Hydrogenation Process Technology for Manufacturability and Improved Operability of HgCdTe Infrared Detectors

SBIR 第二阶段：光子辅助氢化工艺技术，提高 HgCdTe 红外探测器的可制造性和可操作性

• 批准号: 0724233
• 负责人: Ronald Hellmer
• 金额: $ 49.99万
• 依托单位: Amethyst Research Incorporated
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-09-01 至 2012-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0724233&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Photon; Assisted

This Phase II Small Business Innovation Research project will deliver an innovative hydrogen passivation technique for improving manufacturability and performance of HgCdTe infrared detectors. Photon-Assisted Hydrogenation (PAH) causes the substrate to be hydrogenated by simultaneous exposure to hydrogen gas and ultra-violet (UV) light which allows hydrogen to diffuse into and become a permanent part of the substrate. In Phase I the feasibility of PAH for the fabrication of high-performance near-infrared HgCdTe avalanche photodiode (APD) arrays on large-area silicon wafers was demonstrated. In Phase II PAH will be optimized for fabrication of HgCdTe infrared sensors from a variety of sources.The PAH process will not only create a new product line of high-performance HgCdTe/Si-based APDs, but may also provide a means to effect significantly higher yields, and thus lower costs for all manufacturers of HgCdTe-based detectors. PAH technology will enable all HgCdTe infrared device manufacturers to grow on Silicon wafers, significantly reducing the cost of these high value systems, and making them more generally available for a broad range of currently unaffordable applications, including civil transport, aviation, medical and robotic vision systems. Derivatives of the this technique may be applied to the manufacture of a variety of other optoelectronic semiconductor devices requiring passivation to mitigate defects.

第二阶段的小企业创新研究项目将提供一种创新的氢钝化技术，以提高HgCdTe红外探测器的可制造性和性能。光子辅助氢化（PAH）通过同时暴露于氢气和紫外线（UV）光使基材氢化，这允许氢扩散到基材中并成为基材的永久部分。在第一阶段中，PAH的高性能近红外碲镉汞雪崩光电二极管（APD）阵列的大面积硅晶片上的制造的可行性进行了论证。在第二阶段，PAH将被优化用于从各种来源制造HgCdTe红外传感器。PAH工艺不仅将创建一个新的高性能HgCdTe/Si基APD产品线，而且还可能提供一种显著提高产量的方法，从而降低所有HgCdTe基探测器制造商的成本。PAH技术将使所有HgCdTe红外设备制造商都能在硅晶片上成长，大大降低这些高价值系统的成本，并使它们更普遍地适用于目前无法负担的广泛应用，包括民用运输，航空，医疗和机器人视觉系统。该技术的衍生物可以应用于制造需要钝化以减轻缺陷的各种其他光电半导体器件。