SBIR Phase I: Selective Area Hydrogenation for High Performance Monolithic HgCdTe NIR Avalanche Photo Diode Arrays
SBIR Phase I: Selective Area Hydrogenation for High Performance Monolithic HgCdTe NIR Avalanche Photo Diode Arrays
批准号:
0539316
负责人:
Ronald Hellmer
金额:
$10.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2006
资助国家:
美国
项目状态:
已结题
起止时间:
2006-01-01 至 2006-06-30
中文摘要
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英文摘要
This Small Business Innovation Research (SBIR) Phase I project will develop a newpassivation technique, derived from a recent discovery that semiconductors can bereadily hydrogenated by simultaneous exposure to hydrogen gas and ultra-violet light.The technique has a number of advantages over conventional glow dischargehydrogenation, is immediately applicable to processes requiring selective areapassivation, and does not require contact masks. The company has teamed with Raytheon Vision Systems (RVS) to develop the technique for fabrication of high performance near-infrared (NIR)- HgCdTe avalanche-photodiode arrays (APD) on large area silicon wafers, heretofore not feasible due to the threading dislocations that arise from the large lattice mismatch between HgCdTe and Si. Such defects in HgCdTe can be passivated by hydrogenation but the process through which RVS grows the integrated diode structures necessitates that hydrogenation be performed on fully processed diode arrays, presenting an ideal application for both the development and demonstration of this technology. Phase I therefore, will provide a definitive demonstration of the technology, an immediate solution to the realization of low cost HgCdTe APD's on Si, and a clearlyidentified roll-out customer at the end of Phase II to license the technology.Commercially, the selective area defect passivation technology developed herehas the potential to fundamentally change the way NIR APD arrays are produced (andused) and could enable RVS to realize monolithic HgCdTe APDs on Si.HgCdTe APDs and APD arrays offer unique advantages for high-performanceeyesafe LADAR sensors. These include: operation at room temperature, low-excessnoise, high gain, high-quantum efficiency at eyesafe wavelengths, GHz bandwidth, andhigh-packing density. The ability to grow on Si will significantly reduce the cost of thesesystems, and make them more generally available for civil transport, aviation, and roboticvision systems.
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SBIR Phase II: Photon-Assisted Hydrogenation Process Technology for Manufacturability and Improved Operability of HgCdTe Infrared Detectors
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批准号:0724233
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项目类别:Standard Grant
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资助金额:$49.99万
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财政年份:2007
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负责人:Ronald Hellmer
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依托单位:
国内基金
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