SBIR Phase I: Selective Area Hydrogenation for High Performance Monolithic HgCdTe NIR Avalanche Photo Diode Arrays

SBIR 第一阶段：高性能单片 HgCdTe 近红外雪崩光电二极管阵列的选择性区域氢化

• 批准号: 0539316
• 负责人: Ronald Hellmer
• 金额: $ 10万
• 依托单位: Amethyst Research Incorporated
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-01-01 至 2006-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0539316&HistoricalAwards=false
• 关键词: SBIR; Phase; Selective; Area; Hydrogenation

This Small Business Innovation Research (SBIR) Phase I project will develop a newpassivation technique, derived from a recent discovery that semiconductors can bereadily hydrogenated by simultaneous exposure to hydrogen gas and ultra-violet light.The technique has a number of advantages over conventional glow dischargehydrogenation, is immediately applicable to processes requiring selective areapassivation, and does not require contact masks. The company has teamed with Raytheon Vision Systems (RVS) to develop the technique for fabrication of high performance near-infrared (NIR)- HgCdTe avalanche-photodiode arrays (APD) on large area silicon wafers, heretofore not feasible due to the threading dislocations that arise from the large lattice mismatch between HgCdTe and Si. Such defects in HgCdTe can be passivated by hydrogenation but the process through which RVS grows the integrated diode structures necessitates that hydrogenation be performed on fully processed diode arrays, presenting an ideal application for both the development and demonstration of this technology. Phase I therefore, will provide a definitive demonstration of the technology, an immediate solution to the realization of low cost HgCdTe APD's on Si, and a clearlyidentified roll-out customer at the end of Phase II to license the technology.Commercially, the selective area defect passivation technology developed herehas the potential to fundamentally change the way NIR APD arrays are produced (andused) and could enable RVS to realize monolithic HgCdTe APDs on Si.HgCdTe APDs and APD arrays offer unique advantages for high-performanceeyesafe LADAR sensors. These include: operation at room temperature, low-excessnoise, high gain, high-quantum efficiency at eyesafe wavelengths, GHz bandwidth, andhigh-packing density. The ability to grow on Si will significantly reduce the cost of thesesystems, and make them more generally available for civil transport, aviation, and roboticvision systems.

这项小型企业创新研究（SBIR）第一阶段项目将开发一种新的钝化技术，该技术源于最近发现的半导体可以通过同时暴露于氢气和紫外光而容易地氢化。该技术与传统的辉光放电氢化相比具有许多优点，可立即应用于需要选择性区域钝化的工艺，并且不需要接触掩模。该公司已与雷神视觉系统（RVS）合作，开发在大面积硅晶片上制造高性能近红外（NIR）- HgCdTe雪崩光电二极管阵列（APD）的技术，由于HgCdTe和Si之间的大晶格失配引起的螺纹位错，迄今为止是不可行的。碲镉汞中的这种缺陷可以通过氢化来钝化，但是RVS生长集成二极管结构的过程需要在完全处理的二极管阵列上进行氢化，这为该技术的开发和演示提供了理想的应用。因此，第一阶段将提供该技术的最终演示，在硅上实现低成本HgCdTe APD的直接解决方案，以及在第二阶段结束时明确确定的推出客户以许可该技术。这里开发的选择性区域缺陷钝化技术有可能从根本上改变近红外APD阵列的生产（和使用）方式HgCdTe APD和APD阵列为高性能人眼安全的LADAR传感器提供了独特的优势。其中包括：该器件具有室温工作、低噪声、高增益、人眼安全波长下的高量子效率、GHz带宽和高封装密度等优点。在硅上生长的能力将大大降低这些系统的成本，并使它们更普遍地用于民用运输，航空和机器人视觉系统。