CAREER: Engineering and Parallel Fabrication of Single Electron Transistor Devices Using Carbon Nanotubes

职业：使用碳纳米管的单电子晶体管器件的工程和并行制造

• 批准号: 0748091
• 负责人: Saiful Khondaker
• 金额: $ 40万
• 依托单位: The University of Central Florida Board of Trustees
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-02-01 至 2014-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0748091&HistoricalAwards=false
• 关键词: CAREER; Engineering; Parallel; Fabrication; Single

Abstract: Khondaker The objective of this research is to develop a novel design engineering technique for parallel fabrication of controllable, scalable, and reproducible single electron transistor (SET) devices using carbon nanotubes (CNTs). The approach is to fabricate SET through (i) control positioning of individual CNT between source and drain electrodes via AC dielectrophoresis, (ii) engineering tunnel barrier formation by bending the CNT with a raised local aluminum oxide gate thereby forming a quantum dot, and (iii) controlling the size and operation of the dot by the same local gate. Intellectual Merit: Controlled fabrication and assembly of SET with different sizes from 100 nm to 20 nm will be demonstrated by integrating top down and bottom up techniques. Electronic transport properties will be studied. Room temperature operation and a novel ultra sensitive quantum sensor will be demonstrated. In contrast to the existing SET fabrication techniques, the proposed approach offers parallel fabrication of reproducible SET devices using one dimensional nanostructures. Broader Impact: The proposed research will have significant impact on nanoelectronics, information processing, and ultra sensitive chemical and biological sensing. Continued miniaturization of Si-Metal Oxide Semiconductor Field Effect Transistor will soon hit a major bottleneck. SET will become crucial for information and signal processing. For educational development and outreach, the PI proposes (i) development of a new graduate course titled, Nanoscale Physics and Nanoelectronics, (ii) modification of an undergraduate Nanophysics course, (iii) research training of minority and female students, high school students and teachers and (iv) community outreach through lectures, web based dossier and news letters.

摘要：本研究的目的是开发一种新的设计工程技术，用于使用碳纳米管（CNTs）并行制造可控、可扩展和可重复的单电子晶体管（SET）器件。该方法是通过(i)通过交流电介质电泳控制单个碳纳米管在源极和漏极之间的定位，（ii）通过使用凸起的局部氧化铝栅极弯曲碳纳米管从而形成量子点来设计隧道势垒，以及（iii）通过相同的局部栅极控制点的大小和操作来制造SET。智力优势：通过集成自顶向下和自底向上的技术，将展示100纳米至20纳米不同尺寸的SET的控制制造和组装。电子输运性质将被研究。将演示室温操作和一种新型超灵敏量子传感器。与现有的SET制造技术相比，所提出的方法提供了使用一维纳米结构可重复的SET器件的平行制造。更广泛的影响：提议的研究将对纳米电子学，信息处理和超灵敏的化学和生物传感产生重大影响。硅金属氧化物半导体场效应晶体管的持续小型化将很快遇到主要瓶颈。SET将成为信息和信号处理的关键。在教育发展和推广方面，PI建议(i)开发一门名为“纳米物理和纳米电子学”的新研究生课程，（ii）修改本科纳米物理学课程，（iii）对少数民族和女性学生、高中生和教师进行研究培训，以及（iv）通过讲座、基于网络的档案和新闻信件进行社区推广。