Preparation and photoelectrochemical properties of nanoporous p-type semiconductor films for dye-sensitized p-n solar cells

染料敏化p-n太阳能电池纳米孔p型半导体薄膜的制备及光电化学性能

• 批准号: 18592744
• 负责人: Dr. Torsten Oekermann
• 金额: --
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2005
• 资助国家: 德国
• 起止时间: 2004-12-31 至 2009-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/18592744?language=en
• 关键词: Preparation; photoelectrochemical; properties; nanoporous; type

Dye-sensitzed p-type semiconductor films will be developed towards the preparation of efficient dye-sensitzed p-n solar cells. CuSCN is chosen as p-type semiconductor material and will be electrodeposited together with different dye molecules, which act as structure-directing agents during the deposition and as sensitizers in the deposited films. This method has already been proven to yield nanoporous films with excellent charge carrier transport properties and photoelectrochemical performance in the case of dye-sensitzed n-type films based on ZnO. The photoelectrochemical properties of the CuSCN / dye films, especially transport and surface kinetics of photogenerated charge carriers, will be investigated in detail by frequency- and timeresolved photoelectrochemical methods. The results of these measurements will be correlated with the structural and morphological properties and the underlying preparation conditions. Based on these correlations, the preparation conditions will be developed and optimized to yield films with a high photoelectrochemical performance. The optimized preparation conditions for the CuSCN / dye films will be used to prepare efficient dye-sensitzed p-n cells by electrodeposition, based on p- CuSCN, n-ZnO and dye molecules with anchoring groups that can interact with both semiconductor materials.

染料敏感p型半导体薄膜将朝着制备高效染料敏感p-n太阳电池的方向发展。选择CuSCN作为p型半导体材料，与不同的染料分子一起电沉积，这些染料分子在沉积过程中充当结构导向剂，并在沉积的薄膜中作为敏化剂。这种方法已经被证明在以氧化锌为基础的染料敏感n型薄膜的情况下，可以得到具有良好的载流子输运性能和光电化学性能的纳米多孔薄膜。用频率分辨和时间分辨光电化学方法详细研究了CuSCN/染料薄膜的光电化学性质，特别是光生载流子的输运和表面动力学。这些测量的结果将与结构和形态特性以及基本的制备条件相关联。基于这些关系，将开发和优化制备条件，以获得具有高光电化学性能的薄膜。优化的CuSCN/DYE薄膜的制备条件将用于电沉积制备高效的染料敏化p-n电池，该电池基于p-CuSCN、n-ZnO和带有锚定基团的染料分子，可以与这两种半导体材料相互作用。