Acceptor Doping and Hole Transport in ZnO Films and Heterostructures

ZnO 薄膜和异质结构中的受主掺杂和空穴传输

• 批准号: 0804385
• 负责人: David Norton
• 金额: $ 41.4万
• 依托单位: University of Florida
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-06-15 至 2013-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0804385&HistoricalAwards=false
• 关键词: Acceptor; Doping; Hole; Transport; ZnO

Technical. This project aims for greater understanding and control of p-type doping of ZnO. The project addresses phosphorus doping in epitaxial films on single crystal ZnO, phosphorus doping in non-polar ZnO films, co-doping ZnO with phosphorus and hydrogen, surface passivation, and formation and properties of ZnO pn homo- and heterojunctions. Characterization techniques, including temperature dependent Hall measurements, capacitance-voltage measurements, and low temperature photoluminescence, will be used to elucidate the behavior of phosphorus dopants in these materials. The overall objective of this project is to understand the synthesis and properties of ZnO-related pn homojunctions and heterojunctions in an effort to realize efficient p-type doping, minority carrier injection, and ultraviolet electroluminescence. Expected technological impacts include solid state lighting, thin film electronics and sensors. Understanding the doping of (Zn,Mg)O thin films will also be useful in the development of transparent conducting oxides, widely used as electrode materials in photovoltaic solar cells and light emitting displays. As wide band gap semiconductors, transparent conducting oxides are also attractive as active materials in transparent electric and optoelectronic technologies. Wide gap semiconducting oxides are attractive for transparent transistor development as they can be synthesized as thin films at lower temperatures that are compatible with various substrates, including glass. For chemical or biological sensors, the ability to fabricate pn junctions with ZnO-based materials opens the possibility of using the improved sensitivity of a high electron mobility transistor for sensor applications. Non-Technical. The project addresses fundamental research issues in a topical area of electronic/photonic materials science and condensed matter physics having technological relevance. Basic understanding gained is expected to lead to improved device performance, and to allow design of new components. The project integrates research and education providing students with hands-on laboratory experience and training while conducting forefront research. Educational impacts include UF graduate and undergraduate students, as well as opportunities for outreach to local high school students. In order to address the need to educate engineering graduate students about the relative role of specific technologies to energy consumption, the project?s activities will also include providing a tutorial on Energy Consumption and Technologies to be delivered as part of the Graduate Student Seminar Series in Materials Science. In order to enhance the exposure of undergraduate students to wide bandgap semiconducting oxide research, the project will incorporate undergraduates through an existing Senior Research Thesis program. The research activities will involve a Ph.D graduate student. For both graduate and undergraduates involvement, persons from underrepresented groups (women, minorities) will be particularly encouraged to participate.

技术.该项目旨在更好地理解和控制ZnO的p型掺杂。该项目涉及单晶ZnO外延膜中的磷掺杂、非极性ZnO膜中的磷掺杂、磷和氢共掺杂ZnO、表面钝化以及ZnO pn同质和异质结的形成和性质。表征技术，包括温度相关的霍尔测量，电容电压测量，和低温光致发光，将被用来阐明这些材料中的磷掺杂剂的行为。本计画的主要目的是了解氧化锌相关的pn同质与异质接面的合成与性质，以实现有效的p型掺杂、少数载子注入与紫外线电激发光。预期的技术影响包括固态照明、薄膜电子和传感器。了解（Zn，Mg）O薄膜的掺杂也将有助于开发透明导电氧化物，广泛用作光伏太阳能电池和发光显示器中的电极材料。透明导电氧化物作为宽禁带半导体材料，在透明电子和光电子技术中也是一种很有吸引力的活性材料。宽禁带半导体氧化物对于透明晶体管的开发是有吸引力的，因为它们可以在较低温度下合成为与包括玻璃在内的各种基板相容的薄膜。对于化学或生物传感器，用ZnO基材料制造pn结的能力开启了将高电子迁移率晶体管的改进灵敏度用于传感器应用的可能性。非技术性。该项目涉及电子/光子材料科学和具有技术相关性的凝聚态物理学的主题领域的基础研究问题。所获得的基本理解预计将改善器械性能，并允许设计新组件。该项目整合了研究和教育，为学生提供实践实验室经验和培训，同时进行前沿研究。教育影响包括UF研究生和本科生，以及推广到当地高中生的机会。为了解决需要教育工程研究生的相对作用，具体技术的能源消耗，该项目？的活动还将包括提供一个关于能源消耗和技术的教程，作为材料科学研究生系列研讨会的一部分。为了提高本科生接触宽带隙半导体氧化物研究，该项目将通过现有的高级研究论文计划纳入本科生。研究活动将涉及一名博士研究生。对于研究生和本科生的参与，将特别鼓励代表性不足的群体（妇女、少数民族）的人参加。