Collaborative Research: III-V Nanopillars Grown on Si Substrates

合作研究：在硅衬底上生长的 III-V 纳米柱

• 批准号: 0824258
• 负责人: Hongbin Yu
• 金额: $ 18万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-08-15 至 2011-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0824258&HistoricalAwards=false
• 关键词: Collaborative; Research; III; Nanopillars; Grown

AbstractThe program objective is to explore the growth, structure, optical and electronic transport properties of III-V patterned nanopillars formed on silicon substrate for potential novel electronic and optoelectronic applications. The pillar formation involves a hybrid approach which combines a lithographically patterned substrate and a catalyst layer using either molecular beam or metal organic vapour phase epitaxial techniques. The introduction of the catalyst enables highly crystalline pillar formation despite the 13% lattice-mismatch to the silicon substrate. This is a promising approach to integration of direct bandgap, high mobility III-V nanostructures into the CMOS platform.The Intellectual merit of this proposal is the novel approach that will enable patterned selective growth of III-V nanopillars within a masked Si substrate, by manipulating the diffusion process of catalytic seeds on the substrates. In the end, a III-V vertical pillar based LED and photodetector on the same Si substrate will be fabricated, as a demonstration of the transformative concept of this heterogeneous integration of on-chip optical interconnect. The scientific outcomes will have applications in future high speed, low power electronic devices and on-chip opto-electronics.The Broader impacts of this activity combines expertise and infrastructure from two universities in complementary areas of nanomaterials growth, characterization, patterning, device fabrication and modeling. The exposure and training of the next generation of scientists and engineers occurs through substantial involvement of graduate, undergraduate students, targeted toward the participation of underrepresented groups. Specific involvement of high school students during summer programs is planned for each year at UCLA and ASU.

AbstractThe计划的目标是探索的生长，结构，光学和电子输运性质的III-V族图案化的硅衬底上形成的纳米柱的潜在的新的电子和光电应用。柱的形成涉及一种混合方法，该方法使用分子束或金属有机气相外延技术将光刻图案化的衬底和催化剂层结合在一起。催化剂的引入使得能够形成高度结晶的柱体，尽管与硅衬底存在13%的晶格失配。这是一种很有前途的方法，直接带隙，高迁移率的III-V纳米结构集成到CMOS platform.The智力的优点，这一建议是新的方法，将使图案化的选择性生长的III-V纳米柱在掩模硅衬底，通过操纵催化种子在衬底上的扩散过程。最后，将在同一Si衬底上制造基于III-V垂直柱的LED和光电探测器，作为这种片上光学互连的异构集成的变革性概念的示范。科学成果将应用于未来的高速，低功耗电子器件和片上光电子学。这项活动的更广泛的影响结合了两所大学在纳米材料生长，表征，图案化，器件制造和建模等互补领域的专业知识和基础设施。 下一代科学家和工程师的接触和培训是通过研究生、本科生的大量参与来进行的，目标是代表性不足的群体的参与。 每年加州大学洛杉矶分校和亚利桑那州立大学都计划让高中生参与暑期项目。