GOALI: ZnO Nanowires as Building Blocks for High Performance Transparent Electronics

目标：氧化锌纳米线作为高性能透明电子器件的构建模块

• 批准号: 0926017
• 负责人: Hongbin Yu
• 金额: $ 36万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-09-15 至 2013-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0926017&HistoricalAwards=false
• 关键词: GOALI; ZnO; Nanowires; Building; Blocks

The objective of this GOALI proposal is the fabrication of high mobility, ZnO nanowire field-effect transistor, with both n-type and p-type doing, on polymer or glass substrate for transparent and flexible electronics applications. The approach is to: 1) Synthesize single crystal n- and p-type ZnO nanowires during high temperature deposition on a growth substrate, 2) Perform systematic analysis of the defects in ZnO nanowires, and understand the dopant compensation mechanisms, 3) Characterize and simulate transport properties of parallel aligned nanowire arrays through field effect transistor, and 4) Explore mass integration of parallel-aligned ZnO nanowire arrays onto transparent glass or plastic substrates at low temperatures.The intellectual merit lies in the transformative concepts and approaches that will greatly increase the performance, especially device speed, of transparent electronics. Through a collaborative effort between Arizona State University and Structured Materials Industries, Inc., integration of robust and reliable ZnO NW devices onto polymer substrates will be pursued, beginning with designed synthesis process to understanding their solid state chemistry, and then scaling up for subsequent device integration. The broader impact of the proposed activity is the low temperature integration of high mobility materials (synthesized at high temperatures) onto transparent substrates. The educational aspect will have far reaching consequences; for example, the program will train personnel (including student from a rich pool of underrepresented minorities in Arizona) in a technologically important and futuristic area, so that they can apply their science and engineering skills in the US industries and research laboratories upon completion.

该GOALI提案的目标是在聚合物或玻璃衬底上制造高迁移率ZnO纳米线场效应晶体管，具有n型和p型，用于透明和柔性电子应用。 办法是：1）在生长衬底上高温沉积过程中合成单晶n型和p型ZnO纳米线，2）对ZnO纳米线中的缺陷进行系统分析，并理解掺杂补偿机制，3）表征并模拟通过场效应晶体管的平行排列纳米线阵列的输运性质，以及4）探索在低温下将平行排列的ZnO纳米线阵列大规模集成到透明玻璃或塑料衬底上。其智力价值在于变革性的概念和方法，这将大大提高性能，尤其是器件速度。 通过亚利桑那州立大学和结构材料工业公司之间的合作，将寻求在聚合物衬底上集成坚固可靠的ZnO NW器件，从设计合成工艺开始，以了解其固态化学，然后按比例放大，用于随后的器件集成。拟议活动的更广泛影响是将高迁移率材料（在高温下合成）低温集成到透明基板上。教育方面将产生深远的影响;例如，该计划将在一个技术重要和未来的领域培训人员（包括来自亚利桑那州代表性不足的少数民族的学生），以便他们能够在完成后在美国工业和研究实验室中应用他们的科学和工程技能。