SBIR Phase I: Advanced Polymer resists for Extreme Ultraviolet (EUV) Nanolithography

SBIR 第一阶段：用于极紫外 (EUV) 纳米光刻的先进聚合物抗蚀剂

• 批准号: 0839435
• 负责人: Monica Rabinovich
• 金额: --
• 依托单位: PhotonTech, LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-01-01 至 2009-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0839435&HistoricalAwards=false
• 关键词: SBIR; Phase; Advanced; Polymer; resists

This Small Business Innovation Research (SBIR) project proposes to develop high photospeed, low line edge roughness, and low outgassing photoresist for extreme ultraviolet (EUV) lithography. Although EUV lithography at 13.5 nm wavelength has emerged as a promising candidate to meet the resolution requirements of the microelectronic industry roadmap, yet the development of novel photoresist materials with all of the required imaging properties is still challenging and is one of the major subjects of current nanolithography research. The critical requirements for EUV lithographic photoresist include high photospeed, high resolution, and low line edge roughness. The design of novel resist materials that can achieve all three characteristics is the key for the continued success of high resolution patterning in integrated circuit manufacturing.

这个小企业创新研究（SBIR）项目提出了开发高感光速度，低线边缘粗糙度，低排气光致抗蚀剂的极紫外（EUV）光刻。虽然EUV光刻在13.5 nm波长已成为一个有前途的候选人，以满足微电子工业路线图的分辨率要求，但具有所有所需的成像性能的新型光致抗蚀剂材料的开发仍然是具有挑战性的，是当前纳米光刻研究的主要课题之一。 EUV光刻胶的关键要求包括高感光速度、高分辨率和低线边缘粗糙度。能够实现所有三种特性的新型抗蚀剂材料的设计是集成电路制造中高分辨率图案化持续成功的关键。