SBIR Phase I: Advanced Polymer resists for Extreme Ultraviolet (EUV) Nanolithography

这个小型企业创新研究（SBIR）项目建议开发用于极紫外（EUV）光刻的高光刻速度、低线边缘粗糙度和低排气光刻胶。虽然13.5 nm波长的EUV光刻技术已经成为满足微电子工业路线图分辨率要求的有希望的候选技术，但开发具有所有所需成像性能的新型光刻胶材料仍然具有挑战性，并且是当前纳米光刻研究的主要课题之一。对极紫外光刻光刻胶的关键要求包括高光电速度、高分辨率和低线边缘粗糙度。在集成电路制造中，设计出能够同时实现这三个特性的新型抗蚀剂材料是高分辨率图像化持续成功的关键。

This Small Business Innovation Research (SBIR) project proposes to develop high photospeed, low line edge roughness, and low outgassing photoresist for extreme ultraviolet (EUV) lithography. Although EUV lithography at 13.5 nm wavelength has emerged as a promising candidate to meet the resolution requirements of the microelectronic industry roadmap, yet the development of novel photoresist materials with all of the required imaging properties is still challenging and is one of the major subjects of current nanolithography research. The critical requirements for EUV lithographic photoresist include high photospeed, high resolution, and low line edge roughness. The design of novel resist materials that can achieve all three characteristics is the key for the continued success of high resolution patterning in integrated circuit manufacturing.