SBIR Phase I: High quality, low cost bulk gallium nitride substrates

SBIR 第一阶段：高质量、低成本块状氮化镓衬底

• 批准号: 0839729
• 负责人: Mark D'Evelyn
• 金额: $ 9.99万
• 依托单位: Soraa, Inc., aka SJS Technologies
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-01-01 至 2009-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0839729&HistoricalAwards=false
• 关键词: SBIR; Phase; quality; low; cost

This Small Business Innovation Research Phase I project will investigate the feasibility of growth of high quality, low cost bulk gallium nitride substrates by the high pressure ammonothermal method. The proposed approach utilizes a novel apparatus which is scalable to process volumes of hundreds of liters at modest cost.If successful this project will dramatically reduce the cost of GaN substrates for use in optoelectronics and energy conversion devices.

这项小型企业创新研究第一期项目将研究通过高压氨法生长高质量、低成本块状氮化镓衬底的可行性。所提出的方法利用了一种新颖的设备，该设备可扩展到以适度的成本处理数百升的体积。如果成功，该项目将大大降低用于光电子和能量转换器件的GaN衬底的成本。