SBIR Phase II: High quality, low cost bulk gallium nitride substrates

SBIR 第二阶段：高质量、低成本块状氮化镓衬底

• 批准号: 1026896
• 负责人: Mark D'Evelyn
• 金额: $ 50万
• 依托单位: Soraa, Inc., aka SJS Technologies
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-09-01 至 2014-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1026896&HistoricalAwards=false
• 关键词: SBIR; Phase; II; quality; low

This Small Business Innovation Research (SBIR) Phase II project aims to develop a scalable, compact and rapid ammonothermal method to grow high-quality, low-cost bulk gallium nitride (GaN) substrates. A novel apparatus that is scalable to large volumes at modest cost will be utilized to achieve high-pressure, high-temperature conditions and grow single-crystal GaN. This project is expected to demonstrate the synthesis of ultrapure raw material and the growth of high-quality bulk GaN crystals with excellent crystallinity, improved transparency, a diameter of at least 1 inch and a process capable of rapid scale-up to larger sizes.The broader/commercial impact of this project will be the potential to offer high-quality and significantly lower cost GaN substrates, which may enable their applications in next generation displays including light-emitting diodes (LEDs), green and blue laser diodes etc. Bulk GaN substrates, currently in use for 405 nm laser diodes only and grown by a vapor-phase technique, are projected to be a $405 million market in 2010. The availability of low-cost and high-quality bulk GaN substrates is anticipated to improve efficiency and reduce cost of GaN-based LEDs, which will enable a large reduction in electrical power consumption.

这个小型企业创新研究（SBIR）第二阶段项目旨在开发一种可扩展的，紧凑的和快速的氨法，以生长高质量，低成本的块状氮化镓（GaN）衬底。 一种新的设备，可扩展到大容量在适度的成本将被用来实现高压，高温条件和生长单晶GaN。 该项目预计将展示超纯原材料的合成和高质量块状GaN晶体的生长，该晶体具有优异的结晶度，改善的透明度，直径至少为1英寸，并且能够快速放大到更大尺寸的工艺。该项目的更广泛/商业影响将是提供高质量和显著降低成本的GaN衬底的潜力，这使得它们能够应用于下一代显示器，包括发光二极管（LED）、绿色和蓝色激光二极管等。目前仅用于405 nm激光二极管并通过气相技术生长的块状GaN衬底预计在2010年将是4.05亿美元的市场。 低成本和高质量的块状GaN衬底的可用性预计将提高GaN基LED的效率并降低其成本，这将使电力消耗大幅降低。