Mechanisms and Kinetics of Elementary Reactions on Semiconductor Surfaces

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This project is in the general area of analytical and surface chemistry and in the subfield of semiconductor surface chemistry. This research program will investigate the reactivity of selected hydride and alkylmetal molecules with single crystal surfaces of silicon and gallium arsenide. The goals are to gain insight into patterns of surface reactivity for this technologically important class of systems and to obtain quantitative data on the kinetics of elementary reactions. The research addresses a number of fundamental issues related to the production of technologically important compound semiconductors such as gallium arsenide. Semicondutor surface chemistry is an important area from both a scientific and a technological viewpoint. However, basic information on chemistry occurring on semiconductor surfaces is severely lacking. The results of this research will be very useful.