SBIR Phase I:Si-Ge Quantum Dot Laser

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This Small Business Innovation Research Phase I project is to develop silicon germanium quantum dot lasers. The quantum dot approach has demonstratable advantages for the near-IR wavelengths of 1.3 to 1.55 micron.Near-IR lasers emitting at 1.3 ìm and 1.55 ìm are very important to fullfill the needs of increasing data bandwidth. By developing systems on silicon, a photonic integrated circuit can be fabricated that will address the needs of the telecom marketplace. A low cost 1.3 ìm wavelength laser is viewed by industry analysts as a key-enabling device for high volume production of fiber-optic transceivers for the metro and metro access markets.