SBIR Phase I:Si-Ge Quantum Dot Laser

SBIR 第一阶段：硅锗量子点激光器

• 批准号: 0839718
• 负责人: Matt Kim
• 金额: --
• 依托单位: QuantTera
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-01-01 至 2009-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0839718&HistoricalAwards=false
• 关键词: SBIR; Phase; Si; Ge; Quantum

This Small Business Innovation Research Phase I project is to develop silicon germanium quantum dot lasers. The quantum dot approach has demonstratable advantages for the near-IR wavelengths of 1.3 to 1.55 micron.Near-IR lasers emitting at 1.3 ìm and 1.55 ìm are very important to fullfill the needs of increasing data bandwidth. By developing systems on silicon, a photonic integrated circuit can be fabricated that will address the needs of the telecom marketplace. A low cost 1.3 ìm wavelength laser is viewed by industry analysts as a key-enabling device for high volume production of fiber-optic transceivers for the metro and metro access markets.

这个小企业创新研究第一阶段项目是开发硅锗量子点激光器。量子点方法在1.3 ~ 1.55 μ m波长的近红外波段具有明显的优势，1.3 μ m和1.55 μ m波长的近红外激光器对于满足日益增长的数据带宽的需求是非常重要的。通过在硅上开发系统，可以制造光子集成电路，以满足电信市场的需求。行业分析师认为，低成本的1.3 μ m波长激光器是大批量生产地铁和地铁接入市场光纤收发器的关键设备。