SBIR Phase II: Ultra Low Power InAsN Semiconductor Transistors

SBIR 第二阶段：超低功耗 InAsN 半导体晶体管

• 批准号: 1127568
• 负责人: Matt Kim
• 金额: $ 50万
• 依托单位: QuantTera
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-11-15 至 2014-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1127568&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Ultra; Low

This Small Business Innovation Research (SBIR) Phase II project will demonstrate a new III-V nitride semiconductor alloy and bipolar transistor structure with the potential to enable ultra low power device operation in applications requiring both Radio Frequency (RF) and digital electronics. The problem to be solved is that for RF power amplifier increasing power efficiency has been a major issue for portable and high performance electronic devices. The research objectives is to demonstrate on a standard gallium arsenide (GaAs) transistor platform that the inclusion of our low band gap nitride semiconductor will significantly reduce the turn on voltage, thus increasing the battery life of the device. Our research will start from the development of a low bandgap material to the fabrication of transistor that will be compared to the specifications of cellular based RF amplifiers. This program will begin with device design and material synthesis and end with prototype demonstrations, with our commercial partners. The broader impact/commercial potential of this project will have a huge impact on power consumption in the realm of high-performance personal communication electronics, as the requirement for greater functionality in cell phones rises. GaAs wafers dominate the market for amplifiers in wireless communication products. Transistors have advantages over existing standard GaAs-based devices with reduced power consumption could impact the entire electronics industry. As portable or wireless cellular devices continue to become ever more functional they will require significantly lower turn-on voltages so as to minimize power consumption while sustaining operation over longer periods of time. The overall structure of the project has been designed to provide enriching opportunities in the areas of teaching and training for both the graduate students and university researchers. The exchange ideas between industry and academia will ensure research candidates with an excellent technical background and a sophisticated understanding of the industrial environment.

该小型企业创新研究（SBIR）第二阶段项目将展示一种新的III-V族氮化物半导体合金和双极晶体管结构，该结构具有在需要射频（RF）和数字电子的应用中实现超低功耗器件操作的潜力。 要解决的问题是，对于RF功率放大器，提高功率效率已经成为便携式和高性能电子设备的主要问题。 研究目标是在标准砷化镓（GaAs）晶体管平台上证明，包含我们的低带隙氮化物半导体将显著降低开启电压，从而增加器件的电池寿命。 我们的研究将从低带隙材料的开发开始，到晶体管的制造，将与基于蜂窝的RF放大器的规格进行比较。 该计划将开始与设备设计和材料合成，并与我们的商业合作伙伴的原型演示结束。 随着对手机更大功能的需求增加，该项目的更广泛影响/商业潜力将对高性能个人通信电子领域的功耗产生巨大影响。 砷化镓晶圆主导着无线通信产品中放大器的市场。晶体管具有优于现有标准GaAs基器件的优势，其功耗降低可能会影响整个电子行业。 随着便携式或无线蜂窝设备继续变得越来越实用，它们将需要显著更低的接通电压，以便在维持较长时间段的操作的同时使功耗最小化。该项目的总体结构旨在为研究生和大学研究人员提供丰富的教学和培训机会。 工业界和学术界之间的交流将确保研究候选人具有优秀的技术背景和对工业环境的深刻理解。