SBIR Phase II: Ultra Low Power InAsN Semiconductor Transistors

这个小型企业创新研究(SBIR)二期项目将展示一种新的III-V氮化物半导体合金和双极晶体管结构，具有在需要射频(RF)和数字电子产品的应用中实现超低功率器件运行的潜力。需要解决的问题是，对于射频功率放大器来说，提高功率效率已经成为便携式和高性能电子设备的主要问题。研究目标是在标准的砷化镓(GaAs)晶体管平台上演示，我们的低禁带氮化物半导体的加入将显著降低开启电压，从而延长设备的电池寿命。我们的研究将从低禁带材料的开发到晶体管的制造，这些晶体管将与基于蜂窝的射频放大器的规格进行比较。这个项目将从器件设计和材料合成开始，最后与我们的商业合作伙伴一起进行原型演示。随着对手机更强大功能的需求增加，该项目的更广泛影响/商业潜力将对高性能个人通信电子领域的功耗产生巨大影响。在无线通信产品的放大器市场上，砷化镓晶片占据主导地位。晶体管比现有的标准砷化镓器件具有优势，降低了功耗，可能会影响整个电子行业。随着便携式或无线蜂窝设备的功能不断增强，它们需要的开启电压将大大降低，以便最大限度地减少电力消耗，同时保持更长时间的运行。该项目的总体结构旨在为研究生和大学研究人员在教学和培训领域提供丰富的机会。产业界和学术界之间的思想交流将确保研究候选人具有出色的技术背景和对工业环境的深入了解。

This Small Business Innovation Research (SBIR) Phase II project will demonstrate a new III-V nitride semiconductor alloy and bipolar transistor structure with the potential to enable ultra low power device operation in applications requiring both Radio Frequency (RF) and digital electronics. The problem to be solved is that for RF power amplifier increasing power efficiency has been a major issue for portable and high performance electronic devices. The research objectives is to demonstrate on a standard gallium arsenide (GaAs) transistor platform that the inclusion of our low band gap nitride semiconductor will significantly reduce the turn on voltage, thus increasing the battery life of the device. Our research will start from the development of a low bandgap material to the fabrication of transistor that will be compared to the specifications of cellular based RF amplifiers. This program will begin with device design and material synthesis and end with prototype demonstrations, with our commercial partners. The broader impact/commercial potential of this project will have a huge impact on power consumption in the realm of high-performance personal communication electronics, as the requirement for greater functionality in cell phones rises. GaAs wafers dominate the market for amplifiers in wireless communication products. Transistors have advantages over existing standard GaAs-based devices with reduced power consumption could impact the entire electronics industry. As portable or wireless cellular devices continue to become ever more functional they will require significantly lower turn-on voltages so as to minimize power consumption while sustaining operation over longer periods of time. The overall structure of the project has been designed to provide enriching opportunities in the areas of teaching and training for both the graduate students and university researchers. The exchange ideas between industry and academia will ensure research candidates with an excellent technical background and a sophisticated understanding of the industrial environment.