Non-Thermal-Equilibrium Solid-Phase Crystallization of GeSn-on-Insulator on Si Platform
Non-Thermal-Equilibrium Solid-Phase Crystallization of GeSn-on-Insulator on Si Platform
批准号:
25289089
负责人:
MIYAO Masanobu
金额:
$11.07万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2013
资助国家:
日本
项目状态:
已结题
起止时间:
2013-04-01 至 2016-03-31
中文摘要
点击翻译按钮获取中文摘要
英文摘要
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
Laser-Anneal Seeded Solid-Phase Crystallization for Ultra-Low Temperature Growth of Germanium-Tin
用于超低温生长锗锡的激光退火籽晶固相结晶
DOI:
--
发表时间:
2015
期刊:
影响因子:
--
作者:
[R. Matsumura, K. Moto, H. Chikita, T. Sadoh, H. Ikenoue, and M. Miyao]
通讯作者:
and M. Miyao
DOI:
10.1016/j.tsf.2015.09.069
发表时间:
2016-03
期刊:
Thin Solid Films
影响因子:
2.1
作者:
[T. Sadoh;A. Ooato;J. Park;M. Miyao]
通讯作者:
T. Sadoh;A. Ooato;J. Park;M. Miyao
High-Quality Hybrid-GeSn/Ge Stacked-Structures by Low-Temperature -Induced-Melting Growth
低温诱导熔融生长高质量混合 GeSn/Ge 堆叠结构
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[Y. Kinoshita, R. Matsumura, T. Sadoh, T. Nishimura and M. Miyao]
通讯作者:
T. Nishimura and M. Miyao
Laser-Annealing-Induced Crystallization of Ge1-xSnx (0≦x≦0.2) on Insulating Substrate
绝缘基板上Ge1-xSnx (0≤x≤0.2)的激光退火诱导结晶
DOI:
--
发表时间:
2015
期刊:
影响因子:
--
作者:
[K. Moto, R. Matsumura, T. Sadoh, H. Ikenoue, and M.u Miyao]
通讯作者:
and M.u Miyao
Melting Sn Induced Low-Temperature Seeding for Position Controlled Giant GeSn Crystal Arrays
用于位置控制巨型 GeSn 晶体阵列的熔化锡诱导低温晶种
DOI:
--
发表时间:
2015
期刊:
影响因子:
--
作者:
[Y. Kai, H. Chikita, R. Matsumura, T. Sadoh, and M. Miyao]
通讯作者:
and M. Miyao
共 37 条
Development of Hetero-Materials Integration Technology for Multi-Functional Hybrid Large-Scale Integrated Circuits
-
批准号:24656209
-
项目类别:Grant-in-Aid for Challenging Exploratory Research
-
资助金额:$2.58万
-
财政年份:2012
-
负责人:MIYAO Masanobu
-
依托单位:
Atomically-control of halfmetal/Si interface for spin-transistors
-
批准号:22360127
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.9万
-
财政年份:2010
-
负责人:MIYAO Masanobu
-
依托单位:
Development of spin-function on flexible semiconductors
-
批准号:21656005
-
项目类别:Grant-in-Aid for Challenging Exploratory Research
-
资助金额:$2.18万
-
财政年份:2009
-
负责人:MIYAO Masanobu
-
依托单位:
High-Quality Formation of SiGe on Flexible Substrates for Transistor Application
-
批准号:19360011
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.81万
-
财政年份:2007
-
负责人:MIYAO Masanobu
-
依托单位:
Growth of Ferromagnetic Silicide for Source/Drain Engineering
-
批准号:18063018
-
项目类别:Grant-in-Aid for Scientific Research on Priority Areas
-
资助金额:$34.3万
-
财政年份:2006
-
负责人:MIYAO Masanobu
-
依托单位:
Low-temperature orientation-control of SiGe quasi-single crystal on glass and its device application
-
批准号:15360169
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$8.19万
-
财政年份:2003
-
负责人:MIYAO Masanobu
-
依托单位:
Formation of Si Quasi-Single Crystal by Controlled Excess Vacancy
-
批准号:12450015
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.47万
-
财政年份:2000
-
负责人:MIYAO Masanobu
-
依托单位:
海外基金